- Influence of graphene oxide on metal-insulator-semiconductor tunneling diodesChu Hsuan Lin
Department of Opto electronic Engineering, National Dong Hwa University, Hualien, 97401, Taiwan, Republic of China
Nanoscale Res Lett 7:343. 2012..At 2 V, the photo-to-dark current ratio of the graphene oxide device is 24, larger than the value of 15 measured in the control device...
- Effect of non-lattice oxygen on ZrO2-based resistive switching memoryChun Chieh Lin
Department of Electrical Engineering, National Dong Hwa University, Hualien, 97401, Taiwan
Nanoscale Res Lett 7:187. 2012..In addition, the Al/ZrO2/Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature...