Ray Hua Horng

Summary

Affiliation: National Chung Hsing University
Country: Taiwan

Publications

  1. doi request reprint High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications
    Ray Hua Horng
    Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
    Opt Express 21:14452-7. 2013
  2. doi request reprint GaN light emitting diodes with wing-type imbedded contacts
    Ray Hua Horng
    Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
    Opt Express 21:A1-6. 2013
  3. doi request reprint High thermal stability of high indium content InGaN films grown by pulsed laser deposition
    Kun Ching Shen
    Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
    Opt Express 20:21173-80. 2012
  4. doi request reprint High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target
    Kun Ching Shen
    Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
    Opt Express 20:15149-56. 2012

Collaborators

  • Kun Ching Shen
  • Tzu Yu Wang
  • Dong Sing Wuu

Detail Information

Publications4

  1. doi request reprint High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications
    Ray Hua Horng
    Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
    Opt Express 21:14452-7. 2013
    ..51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications...
  2. doi request reprint GaN light emitting diodes with wing-type imbedded contacts
    Ray Hua Horng
    Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
    Opt Express 21:A1-6. 2013
    ..Therefore, using the imbedded contact to reduce light shading would be a promising prospective for LEDs to achieve high output power...
  3. doi request reprint High thermal stability of high indium content InGaN films grown by pulsed laser deposition
    Kun Ching Shen
    Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
    Opt Express 20:21173-80. 2012
    ..Furthermore, the InGaN films were subjected to metalorganic chemical vapor deposition treatment to regrow a GaN layer; results are promising for the development of high thermal stability InGaN films using the PLD technique...
  4. doi request reprint High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target
    Kun Ching Shen
    Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
    Opt Express 20:15149-56. 2012
    ....