Siddheswar Maikap

Summary

Affiliation: Chang Gung University
Country: Taiwan

Publications

  1. pmc Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
    Amit Prakash
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Rd, Kwei Shan, Tao Yuan 333, Taiwan
    Nanoscale Res Lett 8:220. 2013
  2. pmc Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
    Sheikh Ziaur Rahaman
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Road, Kwei Shan, Tao Yuan, 333, Taiwan
    Nanoscale Res Lett 7:614. 2012
  3. pmc Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
    Sheikh Ziaur Rahaman
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Rd, Kwei Shan, Tao Yuan, 333, Taiwan
    Nanoscale Res Lett 7:345. 2012
  4. pmc Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
    Writam Banerjee
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Rd, Kwei Shan, Tao Yuan 333, Taiwan
    Nanoscale Res Lett 7:194. 2012

Collaborators

  • Sheikh Ziaur Rahaman
  • Amit Prakash
  • Frederick T Chen
  • Ta Chang Tien
  • Heng Yuan Lee
  • Ming Jinn Tsai
  • Wei Su Chen
  • Writam Banerjee
  • Ming Jer Kao
  • Chao Sung Lai
  • Sandip Majumdar
  • Santanu Manna
  • Samit K Ray
  • Atanu Das
  • Jer Ren Yang
  • Ya Hsuan Wu
  • Liann Be Chang
  • Yi Yan Chen

Detail Information

Publications4

  1. pmc Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
    Amit Prakash
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Rd, Kwei Shan, Tao Yuan 333, Taiwan
    Nanoscale Res Lett 8:220. 2013
    ..Under SET operation, Ge/GeOx nanofilaments (or NWs) form in the GeOx film. The diameter of the conducting nanofilament is approximately 40 nm, which is calculated using a new method...
  2. pmc Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
    Sheikh Ziaur Rahaman
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Road, Kwei Shan, Tao Yuan, 333, Taiwan
    Nanoscale Res Lett 7:614. 2012
    ..61 nW/6.4 pW is achieved. In addition, a large memory size of 1,300 Pbit/in2 is achieved with a small nanofilament diameter of 0.25 Å for a small current compliance of 1 nA...
  3. pmc Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
    Sheikh Ziaur Rahaman
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Rd, Kwei Shan, Tao Yuan, 333, Taiwan
    Nanoscale Res Lett 7:345. 2012
    ..Extrapolated 10-year data retention of the Ti nanolayer device was also obtained. The findings of this study will not only improve resistive switching memory performance but also aid future design of nanoscale nonvolatile memory...
  4. pmc Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
    Writam Banerjee
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Rd, Kwei Shan, Tao Yuan 333, Taiwan
    Nanoscale Res Lett 7:194. 2012
    ..can be realized in future for ReRAM device application. This study is not only important for improving the resistive switching memory performance but also help design other nanoscale high-density nonvolatile memory in future...