D J H C Maas
Affiliation: Swiss Federal Institute of Technology
- Growth parameter optimization for fast quantum dot SESAMsD J H C Maas
Department of Physics, Institute of Quantum Electronics, ETH Zurich, Zurich, Switzerland
Opt Express 16:18646-56. 2008..We present design guidelines for QD-SESAMs with low saturation fluence and fast recovery, which are for example important for modelocking of vertical external cavity surface emitting lasers (VECSELs)...
- High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average powerB Rudin
Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich, Switzerland
Opt Express 18:27582-8. 2010..The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser...
- Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule levelS V Marchese
Department of Physics, Institute of Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland
Opt Express 16:6397-407. 2008..56-nm-broad spectrum centered at 1030 nm. The laser is operated in a helium atmosphere to eliminate the air nonlinearity inside the resonator that previously limited the pulse energy...