D J H C MaasSummaryAffiliation: Swiss Federal Institute of Technology Country: Switzerland Publications
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Publications
Growth parameter optimization for fast quantum dot SESAMsD J H C Maas
Department of Physics, Institute of Quantum Electronics, ETH Zurich, Zurich, Switzerland
Opt Express 16:18646-56. 2008..We present design guidelines for QD-SESAMs with low saturation fluence and fast recovery, which are for example important for modelocking of vertical external cavity surface emitting lasers (VECSELs)...
High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average powerB Rudin
Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich, Switzerland
Opt Express 18:27582-8. 2010..The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser...
Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule levelS V Marchese
Department of Physics, Institute of Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland
Opt Express 16:6397-407. 2008..56-nm-broad spectrum centered at 1030 nm. The laser is operated in a helium atmosphere to eliminate the air nonlinearity inside the resonator that previously limited the pulse energy...
