Jesper Wallentin

Summary

Affiliation: Lund University
Country: Sweden

Publications

  1. ncbi High-performance single nanowire tunnel diodes
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 10:974-9. 2010
  2. ncbi Electron trapping in InP nanowire FETs with stacking faults
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 12:151-5. 2012
  3. ncbi Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 11:2286-90. 2011
  4. ncbi Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires
    Martin Hjort
    Nanometer Structure Consortium Lund University, P O Box 118, 221 00 Lund, Sweden
    ACS Nano 6:9679-89. 2012
  5. ncbi Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires
    Bahram Ganjipour
    Division of Solid State Physics, Lund University, Box 118, S 22100, Lund, Sweden
    ACS Nano 6:3109-13. 2012
  6. ncbi Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors
    Hakan Pettersson
    Laboratory of Mathematics, Physics and Electrical Engineering, Halmstad University, Box 823, SE 30118 Halmstad, Sweden Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118, SE 22100 Lund, Sweden
    Nanotechnology 23:135201. 2012

Collaborators

  • Magnus T Borgström
  • Jakob B Wagner
  • Lars Samuelson
  • Hakan Pettersson
  • Bahram Ganjipour
  • Martin Hjort
  • Ngo Tuan Nghia
  • Irina Zubritskaya
  • Rainer Timm
  • Anders Mikkelsen
  • Jesper N Andersen
  • Edvin Lundgren
  • Claes Thelander
  • Ulf Håkanson
  • Federico Capasso
  • Kristian Storm
  • Peter Wickert
  • Lars Landin
  • Alexei A Zakharov

Detail Information

Publications6

  1. ncbi High-performance single nanowire tunnel diodes
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 10:974-9. 2010
    ..2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications...
  2. ncbi Electron trapping in InP nanowire FETs with stacking faults
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 12:151-5. 2012
    ..The mobility shows an unexpected decrease for low doping levels, as well as an unusual temperature dependence that bear resemblance with polycrystalline semiconductors...
  3. ncbi Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 11:2286-90. 2011
    ..23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2)...
  4. ncbi Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires
    Martin Hjort
    Nanometer Structure Consortium Lund University, P O Box 118, 221 00 Lund, Sweden
    ACS Nano 6:9679-89. 2012
    ..Our findings thus give a robust set of quantitative values relating surface chemical composition to specific electronic properties highly relevant for simulating the performance of nanoscale devices...
  5. ncbi Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires
    Bahram Ganjipour
    Division of Solid State Physics, Lund University, Box 118, S 22100, Lund, Sweden
    ACS Nano 6:3109-13. 2012
    ..2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP...
  6. ncbi Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors
    Hakan Pettersson
    Laboratory of Mathematics, Physics and Electrical Engineering, Halmstad University, Box 823, SE 30118 Halmstad, Sweden Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118, SE 22100 Lund, Sweden
    Nanotechnology 23:135201. 2012
    ..The photocurrent decreases with temperature with an activation energy of about 50 meV, which we discuss in terms of a temperature-dependent diffusion length in the substrate and perturbed transport through the mixed-phase nanowires...