Jesper Wallentin

Summary

Affiliation: Lund University
Country: Sweden

Publications

  1. doi request reprint High-performance single nanowire tunnel diodes
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 10:974-9. 2010
  2. doi request reprint Electron trapping in InP nanowire FETs with stacking faults
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 12:151-5. 2012
  3. doi request reprint Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 11:2286-90. 2011
  4. doi request reprint Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 10:4807-12. 2010
  5. doi request reprint Semiconductor-oxide heterostructured nanowires using postgrowth oxidation
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 13:5961-6. 2013
  6. doi request reprint Fluorescent nanowire heterostructures as a versatile tool for biology applications
    Karl Adolfsson
    Division of Solid State Physics The Nanometer Structure Consortium, Lund University, 22100 Lund, Sweden
    Nano Lett 13:4728-32. 2013
  7. pmc Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope
    Rainer Timm
    The Nanometer Structure Consortium, Department of Physics, Lund University, P O Box 118, 221 00 Lund, Sweden
    Nano Lett 13:5182-9. 2013
  8. doi request reprint Solid-liquid-vapor metal-catalyzed etching of lateral and vertical nanopores
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, SE 221 00, Lund, Sweden
    Nanotechnology 24:415303. 2013
  9. doi request reprint Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires
    Martin Hjort
    Nanometer Structure Consortium Lund University, P O Box 118, 221 00 Lund, Sweden
    ACS Nano 6:9679-89. 2012
  10. ncbi request reprint Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires
    Bahram Ganjipour
    Division of Solid State Physics, Lund University, Box 118, S 22100, Lund, Sweden
    ACS Nano 6:3109-13. 2012

Collaborators

  • Magnus T Borgström
  • Jonas O Tegenfeldt
  • Kimberly A Dick
  • Jakob B Wagner
  • Lars Samuelson
  • Rainer Timm
  • Karl Adolfsson
  • Sebastian Lehmann
  • Anders Mikkelsen
  • Bahram Ganjipour
  • Hakan Pettersson
  • Martin Hjort
  • Christelle N Prinz
  • Daniel Jacobsson
  • Stina Oredsson
  • Henrik Persson
  • James L Webb
  • Andreas Jonsson
  • Alexander Fian
  • Olof Persson
  • Knut Deppert
  • David L J Engberg
  • Peter Wickert
  • Alexei A Zakharov
  • Federico Capasso
  • Edvin Lundgren
  • Jesper N Andersen
  • Kristian Storm
  • Lars Landin
  • Ngo Tuan Nghia
  • Claes Thelander
  • Ulf Håkanson
  • Irina Zubritskaya

Detail Information

Publications12

  1. doi request reprint High-performance single nanowire tunnel diodes
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 10:974-9. 2010
    ..2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications...
  2. doi request reprint Electron trapping in InP nanowire FETs with stacking faults
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 12:151-5. 2012
    ..The mobility shows an unexpected decrease for low doping levels, as well as an unusual temperature dependence that bear resemblance with polycrystalline semiconductors...
  3. doi request reprint Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 11:2286-90. 2011
    ..23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2)...
  4. doi request reprint Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 10:4807-12. 2010
    ..The decrease in diameter correlates with an increase in zincblende segment length as measured by TEM. We explain the results with a modified nucleation model. ..
  5. doi request reprint Semiconductor-oxide heterostructured nanowires using postgrowth oxidation
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, S 221 00, Lund, Sweden
    Nano Lett 13:5961-6. 2013
    ..This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature...
  6. doi request reprint Fluorescent nanowire heterostructures as a versatile tool for biology applications
    Karl Adolfsson
    Division of Solid State Physics The Nanometer Structure Consortium, Lund University, 22100 Lund, Sweden
    Nano Lett 13:4728-32. 2013
    ....
  7. pmc Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope
    Rainer Timm
    The Nanometer Structure Consortium, Department of Physics, Lund University, P O Box 118, 221 00 Lund, Sweden
    Nano Lett 13:5182-9. 2013
    ..We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques. ..
  8. doi request reprint Solid-liquid-vapor metal-catalyzed etching of lateral and vertical nanopores
    Jesper Wallentin
    Solid State Physics, Lund University, Box 118, SE 221 00, Lund, Sweden
    Nanotechnology 24:415303. 2013
    ..We explain the process by a solid-liquid-vapor model, in which the liquid metal particle catalyzes the dissolution of the solid InP. ..
  9. doi request reprint Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires
    Martin Hjort
    Nanometer Structure Consortium Lund University, P O Box 118, 221 00 Lund, Sweden
    ACS Nano 6:9679-89. 2012
    ..Our findings thus give a robust set of quantitative values relating surface chemical composition to specific electronic properties highly relevant for simulating the performance of nanoscale devices...
  10. ncbi request reprint Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires
    Bahram Ganjipour
    Division of Solid State Physics, Lund University, Box 118, S 22100, Lund, Sweden
    ACS Nano 6:3109-13. 2012
    ..2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP...
  11. ncbi request reprint Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors
    Hakan Pettersson
    Laboratory of Mathematics, Physics and Electrical Engineering, Halmstad University, Box 823, SE 30118 Halmstad, Sweden Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118, SE 22100 Lund, Sweden
    Nanotechnology 23:135201. 2012
    ..The photocurrent decreases with temperature with an activation energy of about 50 meV, which we discuss in terms of a temperature-dependent diffusion length in the substrate and perturbed transport through the mixed-phase nanowires...
  12. doi request reprint A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow
    Sebastian Lehmann
    Solid State Physics, Lund University, Box 118, S 221 00 Lund, Sweden
    Nano Lett 13:4099-105. 2013
    ..We show that the change in surface energetics of the vapor-liquid-solid system at the vapor-liquid and liquid-solid interface is likely to control the crystal structure in our nanowires. ..