A Brimont

Summary

Country: Spain

Publications

  1. ncbi High-contrast 40 Gb/s operation of a 500 μm long silicon carrier-depletion slow wave modulator
    A Brimont
    Nanophotonics Technology Center, Universitat Politècnica de València, Valencia, Spain
    Opt Lett 37:3504-6. 2012
  2. ncbi Strong electro-optical modulation enhancement in a slow wave corrugated waveguide
    A Brimont
    Valencia Nanophotonics Technology Center, Universidad Politécnica de Valencia Camino de Vera, S N, 46022 Valencia, Spain
    Opt Express 17:9204-11. 2009
  3. ncbi High speed silicon electro-optical modulators enhanced via slow light propagation
    A Brimont
    Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera, s n 46022 Valencia
    Opt Express 19:20876-85. 2011
  4. ncbi Increased sensitivity through maximizing the extinction ratio of SOI delay-interferometer receiver for 10G DPSK
    M Aamer
    Nanophotonics Technology Center, Universitat Politècnica Valencia, Camino de Vera s n, 46022, Valencia, Spain
    Opt Express 20:14698-704. 2012
  5. ncbi Silicon slow-light-based photonic mixer for microwave-frequency conversion applications
    A M Gutierrez
    Nanophotonics Technology Center, Universitat Politècnica Valencia, Valencia, Spain
    Opt Lett 37:1721-3. 2012

Collaborators

  • F Y Gardes
  • A M Gutierrez
  • M Aamer
  • P Sanchis
  • A Griol
  • J Marti
  • J Herrera
  • A Hakansson
  • D J Thomson
  • G T Reed
  • J M Fedeli

Detail Information

Publications5

  1. ncbi High-contrast 40 Gb/s operation of a 500 μm long silicon carrier-depletion slow wave modulator
    A Brimont
    Nanophotonics Technology Center, Universitat Politècnica de València, Valencia, Spain
    Opt Lett 37:3504-6. 2012
    ..These results confirm the benefits of slow light as a means to enhance the performance of silicon modulators based on the plasma dispersion effect...
  2. ncbi Strong electro-optical modulation enhancement in a slow wave corrugated waveguide
    A Brimont
    Valencia Nanophotonics Technology Center, Universidad Politécnica de Valencia Camino de Vera, S N, 46022 Valencia, Spain
    Opt Express 17:9204-11. 2009
    ..15c. Interaction lengths and insertion losses below 750 microm and 3dB are respectively found for voltage variations in the range -8V to -10V. Furthermore, the device electrical modulation bandwidth is expected to be higher than 10 GHz...
  3. ncbi High speed silicon electro-optical modulators enhanced via slow light propagation
    A Brimont
    Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera, s n 46022 Valencia
    Opt Express 19:20876-85. 2011
    ..These results, supported by modulation rate capabilities reaching 40 Gbit/s, pave a foreseeable way towards dense, low power and ultra fast integrated networks-on-chip for future chip-scale high performance computing systems...
  4. ncbi Increased sensitivity through maximizing the extinction ratio of SOI delay-interferometer receiver for 10G DPSK
    M Aamer
    Nanophotonics Technology Center, Universitat Politècnica Valencia, Camino de Vera s n, 46022, Valencia, Spain
    Opt Express 20:14698-704. 2012
    ..Also the foot-print of the device is minimized to 0.11 mm(2) by the use of compact spirals...
  5. ncbi Silicon slow-light-based photonic mixer for microwave-frequency conversion applications
    A M Gutierrez
    Nanophotonics Technology Center, Universitat Politècnica Valencia, Valencia, Spain
    Opt Lett 37:1721-3. 2012
    ..25 GHz. A minimum transmission point is used to successfully demonstrate the upconversion with very low conversion losses of ~7 dB and excellent quality of the received I/Q modulated QPSK signal with an optimum EVM of ~8%...