Shiyang ZhuSummaryCountry: Singapore Publications
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Publications
Effect of cladding layer and subsequent heat treatment on hydrogenated amorphous silicon waveguidesShiyang Zhu
Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, 117685, Singapore
Opt Express 20:23676-83. 2012....- Performance of ultracompact copper-capped silicon hybrid plasmonic waveguide-ring resonators at telecom wavelengthsShiyang Zhu
Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, Singapore 117685, Singapore
Opt Express 20:15232-46. 2012.... - Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO₂-Si-SiO₂-Cu nanoplasmonic waveguidesShiyang Zhu
Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, Singapore 117685, Singapore
Opt Express 20:5867-81. 2012..7 dB. The experimental results of these devices agree well with those predicted from numerical simulations with suitable Cu permittivity data... - Propagation losses in undoped and n-doped polycrystalline silicon wire waveguidesShiyang Zhu
Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, Singapore 117685
Opt Express 17:20891-9. 2009..9 dB/cm in the 300-nm-wide polySi waveguides. However, for the phosphorus doped polySi waveguides, the propagation loss is slightly increased by the forming gas annealing... - Low-loss amorphous silicon wire waveguide for integrated photonics: effect of fabrication process and the thermal stabilityShiyang Zhu
Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, 117685, Singapore
Opt Express 18:25283-91. 2010..Even higher temperature (i.e., >600°C) annealing leads to the propagation loss approaching to the polycrystalline silicon counterparts (~40-50 dB/cm) due to onset of a-Si:H solid-phase crystallization... - Theoretical investigation of silicon MOS-type plasmonic slot waveguide based MZI modulatorsShiyang Zhu
Institute of Microelectronics, A STAR Agency for Science, Technology and Research, Singapore
Opt Express 18:27802-19. 2010..55-µm wavelength, simulation shows an insertion loss of ~-8 dB, an extinction ratio of ~7.3 dB - with a switching voltage of ~5.6 V, and a bandwidth of ~500 GHz. A possible approach to reduce the switching voltage is addressed... - Silicon-based horizontal nanoplasmonic slot waveguides for on-chip integrationShiyang Zhu
Institute of Microelectronics, A STAR Agency for Science, Technology and Research, Singapore
Opt Express 19:8888-902. 2011..6-1.0 dB. These results indicate the potential for seamless integration of various functional nanoplasmonic devices in existing Si electronic photonic integrated circuits (Si-EPICs)... - Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguideShiyang Zhu
Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, Singapore 117685, Singapore
Opt Express 19:15843-54. 2011..The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used...