Xiaoguang Tu

Summary

Country: Singapore

Publications

  1. doi Thermal independent silicon-nitride slot waveguide biosensor with high sensitivity
    Xiaoguang Tu
    Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685, Singapore
    Opt Express 20:2640-8. 2012
  2. doi Fabrication of low loss and high speed silicon optical modulator using doping compensation method
    Xiaoguang Tu
    Institute of Microelectronics, A STAR Agency for Science, Technology and Research, Singapore Science Park II, Singapore
    Opt Express 19:18029-35. 2011
  3. doi 50-Gb/s silicon optical modulator with traveling-wave electrodes
    Xiaoguang Tu
    Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685, Singapore
    Opt Express 21:12776-82. 2013
  4. doi On-chip quasi-digital optical switch using silicon microring resonator-coupled Mach-Zehnder interferometer
    Junfeng Song
    Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, Singapore 117685, Singapore
    Opt Express 21:12767-75. 2013
  5. ncbi Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors
    Junfeng Song
    Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, Singapore 117685, Singapore
    Opt Express 20:4189-97. 2012
  6. doi Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO2 superlattice
    L Ding
    Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, 117685 Singapore
    Opt Express 19:2729-38. 2011

Collaborators

Detail Information

Publications6

  1. doi Thermal independent silicon-nitride slot waveguide biosensor with high sensitivity
    Xiaoguang Tu
    Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685, Singapore
    Opt Express 20:2640-8. 2012
    ..29 × 10(-5) RIU respectively. By utilizing Vernier effect through cascaded MZI structures, the measured sensitivity enhancement factor is 8.38, which results in a surface detection limit of 0.155 (pg mm(-2))...
  2. doi Fabrication of low loss and high speed silicon optical modulator using doping compensation method
    Xiaoguang Tu
    Institute of Microelectronics, A STAR Agency for Science, Technology and Research, Singapore Science Park II, Singapore
    Opt Express 19:18029-35. 2011
    ..After doping profile optimizing, the measured bandwidth of the phase shifter with doping compensation can even reaches 17 GHz with a Loss·Efficiency FOM of about 25.4 dB·V...
  3. doi 50-Gb/s silicon optical modulator with traveling-wave electrodes
    Xiaoguang Tu
    Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685, Singapore
    Opt Express 21:12776-82. 2013
    ..Measurement result demonstrates that reasonable choosing of working point and doping profile of the silicon optical modulator is critical in order to match the performance requirement of the real application...
  4. doi On-chip quasi-digital optical switch using silicon microring resonator-coupled Mach-Zehnder interferometer
    Junfeng Song
    Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, Singapore 117685, Singapore
    Opt Express 21:12767-75. 2013
    ..7 ns only...
  5. ncbi Electrical tracing-assisted dual-microring label‑free optical bio/chemical sensors
    Junfeng Song
    Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, Singapore 117685, Singapore
    Opt Express 20:4189-97. 2012
    ..Proof-of-principle demonstration by testing polyelectrolyte multilayer shows the sensitivity of ~4.0 mW/ng∙mm-2 and the detection limit of ~5.35 pg/mm2...
  6. doi Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO2 superlattice
    L Ding
    Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Science Park II, 117685 Singapore
    Opt Express 19:2729-38. 2011
    ..Based on the lateral-current-injection scheme, a Si/SiO2 MQW LED with Fabry-Perot (FP) microcavity and an on-chip waveguided LED that emits at 1.55-µm are proposed...