Goutam Kumar Dalapati

Summary

Country: Singapore

Publications

  1. doi request reprint Impact of Al Passivation and Cosputter on the Structural Property of β-FeSi2 for Al-Doped β-FeSi2/n-Si(100) Based Solar Cells Application
    Goutam Kumar Dalapati
    Institute of Materials Research and Engineering, A STAR Agency for Science, Technology and Research, 3 Research Link, Singapore 117602
    ACS Appl Mater Interfaces 5:5455-60. 2013
  2. doi request reprint Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric
    G K Dalapati
    Institute of Materials Research and Engineering, A STAR Agency for Science, Technology and Research, 3 Research Link, Singapore 117602
    ACS Appl Mater Interfaces 5:949-57. 2013
  3. pmc Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
    Goutam Kumar Dalapati
    Institute of Materials Research and Engineering, A STAR, Agency for Science, Technology and Research, 3 Research Link, Singapore 117602, Singapore
    Nanoscale Res Lett 7:99. 2012

Detail Information

Publications3

  1. doi request reprint Impact of Al Passivation and Cosputter on the Structural Property of β-FeSi2 for Al-Doped β-FeSi2/n-Si(100) Based Solar Cells Application
    Goutam Kumar Dalapati
    Institute of Materials Research and Engineering, A STAR Agency for Science, Technology and Research, 3 Research Link, Singapore 117602
    ACS Appl Mater Interfaces 5:5455-60. 2013
    ..The effects of Al-out diffusion on the performance of heterostructure solar cells have been investigated and discussed in detail. ..
  2. doi request reprint Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric
    G K Dalapati
    Institute of Materials Research and Engineering, A STAR Agency for Science, Technology and Research, 3 Research Link, Singapore 117602
    ACS Appl Mater Interfaces 5:949-57. 2013
    ....
  3. pmc Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
    Goutam Kumar Dalapati
    Institute of Materials Research and Engineering, A STAR, Agency for Science, Technology and Research, 3 Research Link, Singapore 117602, Singapore
    Nanoscale Res Lett 7:99. 2012
    ..The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh...