Vladimir A Yuryev

Summary

Country: Russia

Publications

  1. pmc Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
    Kirill V Chizh
    A M Prokhorov General Physics Institute of the Russian Academy of Sciences, A M Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991, Russia
    Nanoscale Res Lett 8:177. 2013
  2. pmc Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED
    Larisa V Arapkina
    A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, Moscow, 119991, Russia
    Nanoscale Res Lett 6:218. 2011
  3. pmc CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth
    Larisa V Arapkina
    A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, Moscow, 119991, Russia
    Nanoscale Res Lett 6:345. 2011
  4. pmc Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
    Vladimir A Yuryev
    A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, 119991 Moscow, Russia
    Nanoscale Res Lett 6:522. 2011

Collaborators

  • Larisa V Arapkina
  • Kirill V Chizh
  • Mikhail S Storozhevykh
  • Valery A Chapnin
  • Vladimir Y Resnik
  • Victor P Kalinushkin
  • Lyudmila A Krylova
  • Vladimir M Shevlyuga
  • Mikhail S Storojevyh

Detail Information

Publications4

  1. pmc Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
    Kirill V Chizh
    A M Prokhorov General Physics Institute of the Russian Academy of Sciences, A M Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991, Russia
    Nanoscale Res Lett 8:177. 2013
    ..Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%â"ƒ to 0.6%/â"ƒ for forward bias and around 2.5%/â"ƒ for reverse bias of the diodes...
  2. pmc Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED
    Larisa V Arapkina
    A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, Moscow, 119991, Russia
    Nanoscale Res Lett 6:218. 2011
    ..Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg...
  3. pmc CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth
    Larisa V Arapkina
    A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, Moscow, 119991, Russia
    Nanoscale Res Lett 6:345. 2011
    ..The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL at coverages ~14 Å. Nanocrystalline Ge 2D layer begins forming at coverages >14 Å...
  4. pmc Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
    Vladimir A Yuryev
    A, M, Prokhorov General Physics Institute of RAS, 38 Vavilov Street, 119991 Moscow, Russia
    Nanoscale Res Lett 6:522. 2011
    ..Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature...