Aleksandr Nikiforov

Summary

Country: Russia

Publications

  1. pmc Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)
    Andrew Yakimov
    Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Prospekt Lavrent eva 13, Novosibirsk, 630090, Russia
    Nanoscale Res Lett 7:494. 2012
  2. pmc Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE
    Aleksandr I Nikiforov
    Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, Lavrentjeva 13, Novosibirsk, 630090, Russia
    Nanoscale Res Lett 7:561. 2012
  3. pmc Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
    Vladimir Mashanov
    A, V, Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentyev Avenue, 13, Novosibirsk 630090, Russia
    Nanoscale Res Lett 6:85. 2011
  4. pmc Electromodulated reflectance study of self-assembled Ge/Si quantum dots
    Andrew Yakimov
    Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia
    Nanoscale Res Lett 6:208. 2011

Collaborators

  • Andrew Yakimov
  • Anatolii Dvurechenskii
  • Aleksei Bloshkin
  • Vyacheslav Timofeev
  • Vladimir Mashanov
  • Ing Song Yu
  • Vladimir Ulyanov
  • Oleg Pchelyakov
  • Henry Cheng

Detail Information

Publications4

  1. pmc Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)
    Andrew Yakimov
    Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Prospekt Lavrent eva 13, Novosibirsk, 630090, Russia
    Nanoscale Res Lett 7:494. 2012
    ..At a sample temperature of 90 K and no applied bias, a responsivity of 0.83 mA/W and detectivity of 8 × 1010 cm Hz1/2/W at λ = 3.4 μm were measured under normal incidence infrared radiation...
  2. pmc Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE
    Aleksandr I Nikiforov
    Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, Lavrentjeva 13, Novosibirsk, 630090, Russia
    Nanoscale Res Lett 7:561. 2012
    ..Data on the growth of Ge/GexSi1-x/Ge heterostructures with the uniform array of islands in the second layer of the Ge film have been received...
  3. pmc Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
    Vladimir Mashanov
    A, V, Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentyev Avenue, 13, Novosibirsk 630090, Russia
    Nanoscale Res Lett 6:85. 2011
    ..Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge0.96Sn0.04 films is found to depend on the temperature of the substrate...
  4. pmc Electromodulated reflectance study of self-assembled Ge/Si quantum dots
    Andrew Yakimov
    Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia
    Nanoscale Res Lett 6:208. 2011
    ..The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point...