A Podhorodecki

Summary

Country: Poland

Publications

  1. ncbi On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD
    Artur Podhorodecki
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50 370, Poland
    Nanoscale Res Lett 8:98. 2013
  2. ncbi Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide
    Grzegorz Zatryb
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370, Wroclaw, Poland
    Nanoscale Res Lett 8:40. 2013
  3. ncbi On the nature of carrier relaxation and ion-ion interactions in ultrasmall β-NaYF4:Eu3+ nanocrystals--effect of the surface
    Artur Podhorodecki
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Nanoscale 5:429-36. 2013
  4. ncbi On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
    G Zatryb
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Nanoscale Res Lett 6:106. 2011
  5. ncbi Correlation between stress and carrier nonradiative recombination for silicon nanocrystals in an oxide matrix
    G Zatryb
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Nanotechnology 22:335703. 2011
  6. ncbi Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition
    A Podhorodecki
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Nanotechnology 23:475707. 2012
  7. ncbi Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications
    G Zatryb
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Opt Express 18:22004-9. 2010
  8. ncbi Temperature dependent emission quenching for silicon nanoclusters
    A Podhorodecki
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    J Nanosci Nanotechnol 10:5648-52. 2010

Collaborators

  • G Zatryb
  • J Misiewicz
  • Grzegorz Zatryb
  • Y S Shen
  • M A Green
  • X J Hao
  • Fabrice Gourbilleau
  • Julien Cardin
  • Jan Misiewicz
  • J Cardin
  • F Gourbilleau

Detail Information

Publications8

  1. ncbi On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD
    Artur Podhorodecki
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50 370, Poland
    Nanoscale Res Lett 8:98. 2013
    ..The temperature quenching mechanism of the emission is discussed. Also, the origin of visible emission and kinetic properties of Er-related emission have been discussed in details...
  2. ncbi Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide
    Grzegorz Zatryb
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370, Wroclaw, Poland
    Nanoscale Res Lett 8:40. 2013
    ..By conducting the Fourier transform infrared absorption experiments, we have correlated the stresses exerted on the nanocrystal core to the degree of matrix structural order. PACS: 78.67.Bf, 78.67.Pt, 73.63.Bd, 78.47.D, 74.25.Nd...
  3. ncbi On the nature of carrier relaxation and ion-ion interactions in ultrasmall β-NaYF4:Eu3+ nanocrystals--effect of the surface
    Artur Podhorodecki
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Nanoscale 5:429-36. 2013
    ..Furthermore, it has been proposed that the different kinetic properties of the surface Eu ions are mainly caused by the formation of a charge transfer state between the ions and ligand groups attached to the NCs surface...
  4. ncbi On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
    G Zatryb
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Nanoscale Res Lett 6:106. 2011
    ..Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples...
  5. ncbi Correlation between stress and carrier nonradiative recombination for silicon nanocrystals in an oxide matrix
    G Zatryb
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Nanotechnology 22:335703. 2011
    ....
  6. ncbi Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition
    A Podhorodecki
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Nanotechnology 23:475707. 2012
    ..In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature...
  7. ncbi Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications
    G Zatryb
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    Opt Express 18:22004-9. 2010
    ..It was also proposed that changes observed in the distribution central moments reflect the disorder induced by boron-doping...
  8. ncbi Temperature dependent emission quenching for silicon nanoclusters
    A Podhorodecki
    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50 370 Wroclaw, Poland
    J Nanosci Nanotechnol 10:5648-52. 2010
    ..Moreover, it has been observed that obtained PL intensities versus temperature exhibit a strong dependence on the excitation power density in the low temperature range...