- Strain-driven electronic band structure modulation of si nanowiresKi Ha Hong
Samsung Advanced Institute of Technology, Mt 14 1, Nongseo Dong, Giheung gu, Yongin si, Gyeonggi Do, 446 712, Korea
Nano Lett 8:1335-40. 2008..We discuss the origin of this strain dependence based on the band features of bulk silicon and the wave functions of SiNWs. These results could be helpful for band structure engineering and analysis of SiNWs in nanoscale devices...
- Asymmetric doping in silicon nanostructures: the impact of surface dangling bondsKi Ha Hong
Samsung Advanced Institute of Technology, Mt 14, Gyeonggi Do, Korea
Nano Lett 10:1671-6. 2010..On the basis of our results, we show that the control of the growth direction of silicon nanowire as well as surface passivation is very important in preventing dopant deactivation...
- Surface Ferromagnetic p-Type ZnO Nanowires through Charge Transfer DopingSung Hoon Lee
Samsung Advanced Institute of Technology, Yongin 446 712, Korea
ACS Appl Mater Interfaces 4:1365-70. 2012..The present results suggest that postgrowth engineering of surface states has high potential in manipulating ZnO nanostructures useful for both electronics and spintronics...