Jihoon Lee

Summary

Affiliation: Kwangwoon University
Country: Korea

Publications

  1. pmc Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells
    Jiang Wu
    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People s Republic of China
    Nanoscale Res Lett 8:5. 2013
  2. pmc Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy
    Ming Yu Li
    College of Electronics and Information, Kwangwoon University, Nowon gu Seoul 139 701, South Korea
    Nanoscale Res Lett 7:550. 2012
  3. pmc Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask
    Min Young Hwang
    College of Electronics and Information, Kwangwoon University, Nowon gu Seoul 139 701, South Korea
    Nanoscale Res Lett 6:573. 2011
  4. pmc Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes
    Min Seok Kang
    School of Electronics and Information, Kwangwoon University, Seoul 139 701, Korea
    Nanoscale Res Lett 6:236. 2011
  5. pmc Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide
    Jung Joon Ahn
    School of Electronics and Information, Kwangwoon University, Seoul 139 701, Korea
    Nanoscale Res Lett 6:235. 2011

Collaborators

  • Eun Soo Kim
  • Sang Mo Koo
  • Jiang Wu
  • Gregory J Salamo
  • Ming Yu Li
  • Min Young Hwang
  • Min Seok Kang
  • Jung Joon Ahn
  • Shibin Li
  • Vitaliy G Dorogan
  • Yuriy I Mazur
  • Zhiming M Wang
  • Mao Sui
  • Sabina D Koukourinkova
  • Yusuke Hirono
  • Sangmin Song
  • Nam Kyun Kim
  • Sang Cheol Kim
  • Hyungsuk Kim
  • Sung Jae Joo
  • Wook Bahng
  • Yeong Deuk Jo

Detail Information

Publications5

  1. pmc Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells
    Jiang Wu
    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People s Republic of China
    Nanoscale Res Lett 8:5. 2013
    ..Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy...
  2. pmc Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy
    Ming Yu Li
    College of Electronics and Information, Kwangwoon University, Nowon gu Seoul 139 701, South Korea
    Nanoscale Res Lett 7:550. 2012
    ..The atomic surface roughness is suggested to be the main cause of the sharp contrast of the size and density of Ga droplets and is discussed in terms of surface diffusion...
  3. pmc Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask
    Min Young Hwang
    College of Electronics and Information, Kwangwoon University, Nowon gu Seoul 139 701, South Korea
    Nanoscale Res Lett 6:573. 2011
    ..With an ICP-etched Si using CNT HMDS dispersion, PS is very sharply increased. This result can lead to applications in optoelectronics where the enhancement in light-trapping is important...
  4. pmc Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes
    Min Seok Kang
    School of Electronics and Information, Kwangwoon University, Seoul 139 701, Korea
    Nanoscale Res Lett 6:236. 2011
    ..As a result, the optical response Iillumination/Idark of the 4H-SiC photodiodes were enhanced up to 178%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing...
  5. pmc Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide
    Jung Joon Ahn
    School of Electronics and Information, Kwangwoon University, Seoul 139 701, Korea
    Nanoscale Res Lett 6:235. 2011
    ..5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared...