Katsuaki Tanabe

Summary

Affiliation: University of Tokyo
Country: Japan

Publications

  1. doi request reprint 1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics, University of Tokyo, 4 6 1 Komaba, Meguro, Tokyo 153 8505, Japan
    Opt Express 20:B315-21. 2012
  2. ncbi request reprint Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan
    Opt Express 17:7036-42. 2009
  3. doi request reprint Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics and Institute of Industrial Science, University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 18:10604-8. 2010

Collaborators

Detail Information

Publications4

  1. doi request reprint 1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics, University of Tokyo, 4 6 1 Komaba, Meguro, Tokyo 153 8505, Japan
    Opt Express 20:B315-21. 2012
    ..This Fabry-Perot laser operates with current injection through the GaAs/Si rib interface and exhibits InAs quantum dot ground state lasing at 1.28 μm at room temperature, with a threshold current density of 480 A cm(-2)...
  2. ncbi request reprint Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan
    Opt Express 17:7036-42. 2009
    ..This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon...
  3. doi request reprint Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics and Institute of Industrial Science, University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 18:10604-8. 2010
    ..This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2)...