Masahiro Nomura

Summary

Affiliation: University of Tokyo
Country: Japan

Publications

  1. ncbi Photonic crystal nanocavity laser with a single quantum dot gain
    Masahiro Nomura
    Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 17:15975-82. 2009
  2. ncbi GaAs-based air-slot photonic crystal nanocavity for optomechanical oscillators
    Masahiro Nomura
    Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 20:5204-12. 2012
  3. ncbi Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan
    Opt Express 17:7036-42. 2009
  4. ncbi Circularly polarized light emission from semiconductor planar chiral nanostructures
    Kuniaki Konishi
    Photon Science Center, The University of Tokyo, 7 3 1 Hongo, Bunkyo ku, Tokyo 113 8656, Japan and Department of Applied Physics, The University of Tokyo and CREST JST, Hongo, Tokyo 113 8656, Japan
    Phys Rev Lett 106:057402. 2011

Collaborators

  • Katsuaki Tanabe
  • Kuniaki Konishi
  • Satoshi Iwamoto
  • Yasuhiko Arakawa
  • Naoto Kumagai
  • Makoto Kuwata-Gonokami

Detail Information

Publications4

  1. ncbi Photonic crystal nanocavity laser with a single quantum dot gain
    Masahiro Nomura
    Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 17:15975-82. 2009
    ....
  2. ncbi GaAs-based air-slot photonic crystal nanocavity for optomechanical oscillators
    Masahiro Nomura
    Institute of Industrial Science, The University of Tokyo, Tokyo 153 8505, Japan
    Opt Express 20:5204-12. 2012
    ..This high mechanical quality factor of a GaAs-based structure stems from low thermoelastic loss and leads to more effective optical control of nanomechanical oscillators...
  3. ncbi Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate
    Katsuaki Tanabe
    Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan
    Opt Express 17:7036-42. 2009
    ..This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon...
  4. ncbi Circularly polarized light emission from semiconductor planar chiral nanostructures
    Kuniaki Konishi
    Photon Science Center, The University of Tokyo, 7 3 1 Hongo, Bunkyo ku, Tokyo 113 8656, Japan and Department of Applied Physics, The University of Tokyo and CREST JST, Hongo, Tokyo 113 8656, Japan
    Phys Rev Lett 106:057402. 2011
    ..A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results...