Michiharu Tabe

Summary

Affiliation: Shizuoka University
Country: Japan

Publications

  1. ncbi Atom devices based on single dopants in silicon nanostructures
    Daniel Moraru
    Research Institute of Electronics, Shizuoka University, 3 5 1 Johoku, Nakaku, Hamamatsu, 432 8011, Japan
    Nanoscale Res Lett 6:479. 2011
  2. ncbi Single-electron transport through single dopants in a dopant-rich environment
    Michiharu Tabe
    Research Institute of Electronics, Shizuoka University, 3 5 1 Johoku, Naka ku, Hamamatsu 432 8011, Japan
    Phys Rev Lett 105:016803. 2010

Collaborators

  • Daniel Moraru
  • Juli Cha Tarido
  • Roland Nowak
  • Ryszard Jablonski
  • Takeshi Mizuno
  • Miftahul Anwar
  • Arief Udhiarto
  • Earfan Hamid

Detail Information

Publications2

  1. ncbi Atom devices based on single dopants in silicon nanostructures
    Daniel Moraru
    Research Institute of Electronics, Shizuoka University, 3 5 1 Johoku, Nakaku, Hamamatsu, 432 8011, Japan
    Nanoscale Res Lett 6:479. 2011
    ..These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics...
  2. ncbi Single-electron transport through single dopants in a dopant-rich environment
    Michiharu Tabe
    Research Institute of Electronics, Shizuoka University, 3 5 1 Johoku, Naka ku, Hamamatsu 432 8011, Japan
    Phys Rev Lett 105:016803. 2010
    ..We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs gate voltage characteristics in scaled-down, doped-channel, field-effect transistors...