Masaya Notomi

Summary

Affiliation: NTT Corporation
Country: Japan

Publications

  1. ncbi Ultrahigh-Q nanocavity with 1D photonic gap
    M Notomi
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi 2430198, Japan
    Opt Express 16:11095-102. 2008
  2. ncbi Nonlinear and adiabatic control of high-Q photonic crystal nanocavities
    M Notomi
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi, 2430198 Japan
    Opt Express 15:17458-81. 2007
  3. ncbi On-demand ultrahigh-Q cavity formation and photon pinning via dynamic waveguide tuning
    Masaya Notomi
    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Japan
    Opt Express 16:18657-66. 2008
  4. ncbi All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal
    Akihiko Shinya
    NTT Basic Research Laboratories, Atsugi, Kanagawa, Japan
    Opt Express 16:19382-7. 2008
  5. ncbi Narrow linewidth operation of buried-heterostructure photonic crystal nanolaser
    Jimyung Kim
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi, Kanagawa 243 0198, Japan
    Opt Express 20:11643-51. 2012
  6. ncbi Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser
    Shinji Matsuo
    NTT Photonics Laboratories, NTT Corp, 3 1 Morinosato Wakamiya, Atsugi, Kanagawa 243 0198, Japan
    Opt Express 20:3773-80. 2012
  7. ncbi Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide
    Nobuyuki Matsuda
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi 243 0198, Kanagawa, Japan
    Opt Express 19:19861-74. 2011
  8. ncbi Ultrahigh-Q nanocavities written with a nanoprobe
    Atsushi Yokoo
    NTT Basic Research Laboratories, NTT Corporation, 3 1, Morinosato Wakamiya Atsugi, Kanagawa 243 0198, Japan
    Nano Lett 11:3634-42. 2011
  9. ncbi 20-Gbit/s directly modulated photonic crystal nanocavity laser with ultra-low power consumption
    Shinji Matsuo
    NTT Photonics Laboratories, NTT Corp, 3 1 Morinosato Wakamiya, Atsugi, Kanagawa 243 0198, Japan
    Opt Express 19:2242-50. 2011
  10. ncbi Bound exciton photoluminescence from ion‑implanted phosphorus in thin silicon layers
    Hisashi Sumikura
    NTT Basic Research Laboratories, NTT Corporation, Kanagawa, Japan
    Opt Express 19:25255-62. 2011

Collaborators

  • Takasumi Tanabe
  • Hisashi Sumikura
  • Jimyung Kim
  • Nobuyuki Matsuda
  • Hiroki Takesue
  • Shinji Matsuo
  • Akihiko Shinya
  • Chin Hui Chen
  • Hideaki Taniyama
  • Tomonari Sato
  • Kengo Nozaki
  • Eiichi Kuramochi
  • Yoshihiro Kawaguchi
  • Koji Takeda
  • Atsushi Yokoo
  • Takaaki Kakitsuka
  • T Tawara
  • Koichi Hasebe
  • Young Geun Roh
  • Kohei Kawasaki
  • S R Johnson
  • H Gotoh
  • T Sogawa
  • Y H Zhang
  • H Kamada
  • E Kuramochi
  • N I Cade
  • - Yosia
  • Y-H Zhang
  • D Ding

Detail Information

Publications17

  1. ncbi Ultrahigh-Q nanocavity with 1D photonic gap
    M Notomi
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi 2430198, Japan
    Opt Express 16:11095-102. 2008
    ..Here we numerically demonstrate that ultrahigh-Q (2.0x10(8)) and wavelength-sized (V(eff) approximately 1.4(lambda/n)3) cavities can be achieved by employing only 1D periodicity...
  2. ncbi Nonlinear and adiabatic control of high-Q photonic crystal nanocavities
    M Notomi
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi, 2430198 Japan
    Opt Express 15:17458-81. 2007
    ..Finally, we introduce adiabatic tuning of high-Q nanocavities, which leads to novel wavelength conversion and another type of optical memories...
  3. ncbi On-demand ultrahigh-Q cavity formation and photon pinning via dynamic waveguide tuning
    Masaya Notomi
    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Japan
    Opt Express 16:18657-66. 2008
    ..We numerically show that traveling photons in a waveguide can be pinned by fast local index tuning...
  4. ncbi All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal
    Akihiko Shinya
    NTT Basic Research Laboratories, Atsugi, Kanagawa, Japan
    Opt Express 16:19382-7. 2008
    ..The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 microW, which is about one hundred times less than that required for laser based bistable memories...
  5. ncbi Narrow linewidth operation of buried-heterostructure photonic crystal nanolaser
    Jimyung Kim
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi, Kanagawa 243 0198, Japan
    Opt Express 20:11643-51. 2012
    ..The narrow linewidth is accompanied by a low power consumption and an ultrasmall footprint, thus making this particular laser especially suitable for use as an integrated multi-purpose sensor...
  6. ncbi Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser
    Shinji Matsuo
    NTT Photonics Laboratories, NTT Corp, 3 1 Morinosato Wakamiya, Atsugi, Kanagawa 243 0198, Japan
    Opt Express 20:3773-80. 2012
    ..0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications...
  7. ncbi Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide
    Nobuyuki Matsuda
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi 243 0198, Kanagawa, Japan
    Opt Express 19:19861-74. 2011
    ....
  8. ncbi Ultrahigh-Q nanocavities written with a nanoprobe
    Atsushi Yokoo
    NTT Basic Research Laboratories, NTT Corporation, 3 1, Morinosato Wakamiya Atsugi, Kanagawa 243 0198, Japan
    Nano Lett 11:3634-42. 2011
    ..This demonstration indicates the possibility of realizing photonic integrated circuits on demand, where various circuit patterns are written with a nanoprobe on a universal photonic crystal substrate...
  9. ncbi 20-Gbit/s directly modulated photonic crystal nanocavity laser with ultra-low power consumption
    Shinji Matsuo
    NTT Photonics Laboratories, NTT Corp, 3 1 Morinosato Wakamiya, Atsugi, Kanagawa 243 0198, Japan
    Opt Express 19:2242-50. 2011
    ..We observed a clear eye opening for a 20-Gbit/s NRZ signal modulation with an absorbed input power of 175.2 μW, resulting in an energy cost of 8.76 fJ/bit. This is the smallest reported energy cost for any type of semiconductor laser...
  10. ncbi Bound exciton photoluminescence from ion‑implanted phosphorus in thin silicon layers
    Hisashi Sumikura
    NTT Basic Research Laboratories, NTT Corporation, Kanagawa, Japan
    Opt Express 19:25255-62. 2011
    ..Our results provide important information about ion implantation for doping quantum devices with phosphorus quantum bits...
  11. ncbi All-optical memory based on injection-locking bistability in photonic crystal lasers
    Chin Hui Chen
    NTT Photonics Laboratories, NTT Corp, 3 1 Morinosato Wakamiya, Atsugi, Kanagawa 243 0198, Japan
    Opt Express 19:3387-95. 2011
    ..Fast switching times of about 60 ps were achieved. To the authors' best knowledge, this is the first demonstration of PhC laser-based all-optical memory...
  12. ncbi 40-Gb/s directly-modulated photonic crystal lasers under optical injection-locking
    Chin Hui Chen
    NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa, Japan
    Opt Express 19:17669-76. 2011
    ..In this paper, we report experimental results of the OIL-PhC laser under various injection conditions and also demonstrate 40-Gb/s large-signal direct modulation with an ultralow energy consumption of 6.6 fJ/bit...
  13. ncbi Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity
    Takasumi Tanabe
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi shi, Kanagawa, 243 0198, Japan
    Opt Express 17:22505-13. 2009
    ..6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity...
  14. ncbi Electro-optic adiabatic wavelength shifting and Q switching demonstrated using a p-i-n integrated photonic crystal nanocavity
    Takasumi Tanabe
    NTT Basic Research Laboratories, NTT Corporation, 3 1, Morinosato Wakamiya, Atsugi, Kanagawa, 243 0198, Japan
    Opt Lett 35:3895-7. 2010
    ..The cavity resonance is changed by injecting electrons through a p-i-n junction to reduce the refractive index. In addition, we employ adiabatic wavelength shifting in a demonstration of dynamic Q tuning by electro-optic modulation...
  15. ncbi Ultrahigh-Q one-dimensional photonic crystal nanocavities with modulated mode-gap barriers on SiO2 claddings and on air claddings
    Eiichi Kuramochi
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi shi, Kanagawa 243 0198, Japan
    Opt Express 18:15859-69. 2010
    ..The fabricated air-cladding 1D Si PhC cavities have showed a quality factor of 7.2 x 10(5), which is close to the highest Q value for 1D PhC cavities...
  16. ncbi Finite-difference time-domain analysis of photonic crystal slab cavities with two-level systems
    Hideaki Taniyama
    NTT Basic Research Laboratories, NTT Corporation, 3 1 Morinosato Wakamiya, Atsugi, Kanagawa 243 0198, Japan
    Opt Express 19:23067-77. 2011
    ..We show that enhancement and suppression of optical emission rate from a two-level system are also shown by this model...
  17. ncbi Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities
    T Tawara
    NTT Basic Research Laboratories, NTT Corporation, 3 1, Morinosato Wakamiya, Atsugi, Kanagawa, 243 0198, Japan
    Opt Express 16:5199-205. 2008
    ..7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K...