T Tsuruoka

Summary

Affiliation: National Institute for Materials Science
Country: Japan

Publications

  1. ncbi Forming and switching mechanisms of a cation-migration-based oxide resistive memory
    T Tsuruoka
    International Center for Materials Nanoarchitectonics MANA, National Institute for Materials Science NIMS, Tsukuba, Ibaraki, Japan
    Nanotechnology 21:425205. 2010
  2. ncbi Temperature effects on the switching kinetics of a Cu-Ta2O5-based atomic switch
    Tohru Tsuruoka
    International Center for Materials Nanoarchitectonics MANA, National Institute for Materials Science NIMS, Tsukuba, Ibaraki, Japan
    Nanotechnology 22:254013. 2011

Detail Information

Publications2

  1. ncbi Forming and switching mechanisms of a cation-migration-based oxide resistive memory
    T Tsuruoka
    International Center for Materials Nanoarchitectonics MANA, National Institute for Materials Science NIMS, Tsukuba, Ibaraki, Japan
    Nanotechnology 21:425205. 2010
    ..This switching model is applicable to the operation of cation-migration-based resistive memories using other oxide materials...
  2. ncbi Temperature effects on the switching kinetics of a Cu-Ta2O5-based atomic switch
    Tohru Tsuruoka
    International Center for Materials Nanoarchitectonics MANA, National Institute for Materials Science NIMS, Tsukuba, Ibaraki, Japan
    Nanotechnology 22:254013. 2011
    ..These results are consistent with our switching model...