T Tsuruoka

Summary

Affiliation: National Institute for Materials Science
Country: Japan

Publications

  1. doi request reprint Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch
    Tohru Tsuruoka
    International Center for Materials Nanoarchitectonics WPI MANA, National Institute for Materials Science, 1 1 Namiki, Tsukuba, Ibaraki 305 0044, Japan
    Nanotechnology 23:435705. 2012
  2. ncbi request reprint Forming and switching mechanisms of a cation-migration-based oxide resistive memory
    T Tsuruoka
    International Center for Materials Nanoarchitectonics MANA, National Institute for Materials Science NIMS, Tsukuba, Ibaraki, Japan
    Nanotechnology 21:425205. 2010
  3. ncbi request reprint Temperature effects on the switching kinetics of a Cu-Ta2O5-based atomic switch
    Tohru Tsuruoka
    International Center for Materials Nanoarchitectonics MANA, National Institute for Materials Science NIMS, Tsukuba, Ibaraki, Japan
    Nanotechnology 22:254013. 2011
  4. doi request reprint Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch
    T Hino
    International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1 1 Namiki, Tsukuba, Ibaraki 305 0044, Japan
    Nanotechnology 24:384006. 2013

Collaborators

  • T Hino
  • M Aono
  • H Tanaka
  • T Hasegawa
  • K Terabe
  • T Ogawa

Detail Information

Publications4

  1. doi request reprint Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch
    Tohru Tsuruoka
    International Center for Materials Nanoarchitectonics WPI MANA, National Institute for Materials Science, 1 1 Namiki, Tsukuba, Ibaraki 305 0044, Japan
    Nanotechnology 23:435705. 2012
    ....
  2. ncbi request reprint Forming and switching mechanisms of a cation-migration-based oxide resistive memory
    T Tsuruoka
    International Center for Materials Nanoarchitectonics MANA, National Institute for Materials Science NIMS, Tsukuba, Ibaraki, Japan
    Nanotechnology 21:425205. 2010
    ..This switching model is applicable to the operation of cation-migration-based resistive memories using other oxide materials...
  3. ncbi request reprint Temperature effects on the switching kinetics of a Cu-Ta2O5-based atomic switch
    Tohru Tsuruoka
    International Center for Materials Nanoarchitectonics MANA, National Institute for Materials Science NIMS, Tsukuba, Ibaraki, Japan
    Nanotechnology 22:254013. 2011
    ..These results are consistent with our switching model...
  4. doi request reprint Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch
    T Hino
    International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1 1 Namiki, Tsukuba, Ibaraki 305 0044, Japan
    Nanotechnology 24:384006. 2013
    ..These characteristics can be useful in reconfiguring a circuit such as in neural computing systems. ..