Rakesh Bhandari

Summary

Affiliation: Institute for Molecular Science
Country: Japan

Publications

  1. doi request reprint > 6 MW peak power at 532 nm from passively Q-switched Nd:YAG/Cr4+:YAG microchip laser
    Rakesh Bhandari
    Institute for Molecular Science, Laser Research Center, 38 Nishigonaka, Myodaiji, Okazaki 444 8585, Japan
    Opt Express 19:19135-41. 2011
  2. doi request reprint Megawatt level UV output from [110] Cr<sup>4+</sup>:YAG passively Q-switched microchip laser
    Rakesh Bhandari
    Opt Express 19:22510-4. 2011

Detail Information

Publications2

  1. doi request reprint > 6 MW peak power at 532 nm from passively Q-switched Nd:YAG/Cr4+:YAG microchip laser
    Rakesh Bhandari
    Institute for Molecular Science, Laser Research Center, 38 Nishigonaka, Myodaiji, Okazaki 444 8585, Japan
    Opt Express 19:19135-41. 2011
    ..Further, we optimize the conditions for second harmonic generation at 532 nm wavelength to achieve > 6 MW peak power, 1.7 mJ, 265 ps, 100 Hz pulses with a conversion efficiency of 85%...
  2. doi request reprint Megawatt level UV output from [110] Cr<sup>4+</sup>:YAG passively Q-switched microchip laser
    Rakesh Bhandari
    Opt Express 19:22510-4. 2011
    ..The SHG and FHG conversion efficiencies are 85% and 51%, respectively...