Yoji Yamashita

Summary

Affiliation: Hamamatsu Photonics K.K
Country: Japan

Publications

  1. doi request reprint A 340-nm-band ultraviolet laser diode composed of GaN well layers
    Yoji Yamashita
    Hamamatsu Photonics K K, 5000 Hirakuchi, Hamamatsu 434 8601, Japan
    Opt Express 21:3133-7. 2013

Detail Information

Publications1

  1. doi request reprint A 340-nm-band ultraviolet laser diode composed of GaN well layers
    Yoji Yamashita
    Hamamatsu Photonics K K, 5000 Hirakuchi, Hamamatsu 434 8601, Japan
    Opt Express 21:3133-7. 2013
    ..1 lower than that of the underlying layer which was used for the previously reported 342 nm laser diode. These results provide a chance to the next step for a shorter-wavelength ultraviolet laser diode...