Maurizio Casalino

Summary

Affiliation: Institute for Microelectronics and Microsystems
Country: Italy

Publications

  1. ncbi Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm
    Maurizio Casalino
    Istituto per la Microelettronica e Microsistemi IMM Consiglio Nazionale delle Ricerche Sez, Napoli, Italy
    Opt Express 20:12599-609. 2012
  2. ncbi Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives
    Maurizio Casalino
    Istituto per la Microelettronica e Microsistemi IMM, Consiglio Nazionale delle Ricerche CNR, Via P Castellino 111, 80131 Napoli, Italy
    Sensors (Basel) 10:10571-600. 2010

Detail Information

Publications2

  1. ncbi Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm
    Maurizio Casalino
    Istituto per la Microelettronica e Microsistemi IMM Consiglio Nazionale delle Ricerche Sez, Napoli, Italy
    Opt Express 20:12599-609. 2012
    ..Finally, device capacitance measurements have been carried out demonstrating a capacitance < 5 pF which has the potential for GHz operation subject to a reduction of the series resistance of the ohmic contact...
  2. ncbi Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives
    Maurizio Casalino
    Istituto per la Microelettronica e Microsistemi IMM, Consiglio Nazionale delle Ricerche CNR, Via P Castellino 111, 80131 Napoli, Italy
    Sensors (Basel) 10:10571-600. 2010
    ..Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared...