- Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nmMaurizio Casalino
Istituto per la Microelettronica e Microsistemi IMM Consiglio Nazionale delle Ricerche Sez, Napoli, Italy
Opt Express 20:12599-609. 2012..Finally, device capacitance measurements have been carried out demonstrating a capacitance < 5 pF which has the potential for GHz operation subject to a reduction of the series resistance of the ohmic contact...
- Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectivesMaurizio Casalino
Istituto per la Microelettronica e Microsistemi IMM, Consiglio Nazionale delle Ricerche CNR, Via P Castellino 111, 80131 Napoli, Italy
Sensors (Basel) 10:10571-600. 2010..Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared...