I Cestier

Summary

Affiliation: Technion-Israel Institute of Technology
Country: Israel

Publications

  1. ncbi Chip-scale parametric amplifier with 11 dB gain at 1550 nm based on a slow-light GaInP photonic crystal waveguide
    Isabelle Cestier
    Electrical Engineering Department, Technion, Haifa 32000, Israel
    Opt Lett 37:3996-8. 2012
  2. ncbi Near field imaging of a GaAs photonic crystal cavity and waveguide using a metal coated fiber tip
    I Cestier
    Electrical Engineering Department, Technion, Haifa 32000, Israel
    Opt Express 17:15274-9. 2009
  3. ncbi Resonance enhanced large third order nonlinear optical response in slow light GaInP photonic-crystal waveguides
    I Cestier
    Electrical Engineering Department, Technion, Haifa, 32000, Israel
    Opt Express 18:5746-53. 2010
  4. ncbi Time domain switching/demultiplexing using four wave mixing in GaInP photonic crystal waveguides
    I Cestier
    Electrical Engineering Department, Technion, Haifa, Israel
    Opt Express 19:6093-9. 2011
  5. ncbi Efficient parametric interactions in a low loss GaInP photonic crystal waveguide
    I Cestier
    Electrical Engineering Department, Technion, Haifa 32000, Israel
    Opt Lett 36:3936-8. 2011
  6. ncbi Parametric gain in dispersion engineered photonic crystal waveguides
    A Willinger
    Electrical Engineering Department, Technion Israel Institute of Technology, Technion City, Haifa 32000, Israel
    Opt Express 21:4995-5004. 2013
  7. ncbi Kerr-induced all-optical switching in a GaInP photonic crystal Fabry-Perot resonator
    V Eckhouse
    Electrical Engineering Department, Technion, Haifa 32000, Israel
    Opt Express 20:8524-34. 2012
  8. ncbi Highly efficient four wave mixing in GaInP photonic crystal waveguides
    V Eckhouse
    Electrical Engineering Department, Technion, Haifa, 32000, Israel
    Opt Lett 35:1440-2. 2010

Collaborators

  • S Combrie
  • V Eckhouse
  • A De Rossi
  • G Eisenstein
  • A Willinger
  • M Santagiustina
  • S Roy
  • G Lehoucq
  • P Colman
  • C G Someda

Detail Information

Publications8

  1. ncbi Chip-scale parametric amplifier with 11 dB gain at 1550 nm based on a slow-light GaInP photonic crystal waveguide
    Isabelle Cestier
    Electrical Engineering Department, Technion, Haifa 32000, Israel
    Opt Lett 37:3996-8. 2012
    ..It enables us, therefore, to incorporate the many advantages of parametric amplification within photonic chips for optical communication applications...
  2. ncbi Near field imaging of a GaAs photonic crystal cavity and waveguide using a metal coated fiber tip
    I Cestier
    Electrical Engineering Department, Technion, Haifa 32000, Israel
    Opt Express 17:15274-9. 2009
    ..We observe the effect of the metal coated probe on the resonance wavelength and the intensity distribution. The measurements fit well to finite difference time domain simulations...
  3. ncbi Resonance enhanced large third order nonlinear optical response in slow light GaInP photonic-crystal waveguides
    I Cestier
    Electrical Engineering Department, Technion, Haifa, 32000, Israel
    Opt Express 18:5746-53. 2010
    ..Hence, we conclude that the hybrid nonlinearity is sufficiently fast to enable switching with a time scale of at least 100ps...
  4. ncbi Time domain switching/demultiplexing using four wave mixing in GaInP photonic crystal waveguides
    I Cestier
    Electrical Engineering Department, Technion, Haifa, Israel
    Opt Express 19:6093-9. 2011
    ..In all cases, the extracted pulses at the idler wavelength are undistorted and have a high signal to noise ratio proving the high efficiency and the versatility of the FWM process in the GaInP PhC waveguides we used...
  5. ncbi Efficient parametric interactions in a low loss GaInP photonic crystal waveguide
    I Cestier
    Electrical Engineering Department, Technion, Haifa 32000, Israel
    Opt Lett 36:3936-8. 2011
    ..1 W we achieved a very large conversion efficiency of -6.8 dB as well as a 1.3 dB parametric gain experienced by a weak CW probe signal. Time domain simulations confirm quantitatively all the measured results...
  6. ncbi Parametric gain in dispersion engineered photonic crystal waveguides
    A Willinger
    Electrical Engineering Department, Technion Israel Institute of Technology, Technion City, Haifa 32000, Israel
    Opt Express 21:4995-5004. 2013
    ..We concentrate on narrow band parametric gain which occurs for pump wavelengths in the normal group velocity dispersion regime. The effects of structural details, of pump wavelength and of losses are carefully analyzed...
  7. ncbi Kerr-induced all-optical switching in a GaInP photonic crystal Fabry-Perot resonator
    V Eckhouse
    Electrical Engineering Department, Technion, Haifa 32000, Israel
    Opt Express 20:8524-34. 2012
    ..The switching process is Kerr dominated with the fundamental response being essentially instantaneous so that the obtainable switching speed is strictly determined by the resonator structure...
  8. ncbi Highly efficient four wave mixing in GaInP photonic crystal waveguides
    V Eckhouse
    Electrical Engineering Department, Technion, Haifa, 32000, Israel
    Opt Lett 35:1440-2. 2010
    ..These values are consistent with those obtained from self phase modulation experiments in similar devices...