Igal Bayn

Summary

Affiliation: Technion-Israel Institute of Technology
Country: Israel

Publications

  1. ncbi request reprint Ultra high-Q photonic crystal nanocavity design: the effect of a low-epsilon slab material
    Igal Bayn
    Department of Electrical Engineering and Microelectronics Research Center, Technion Haifa 32000, Israel
    Opt Express 16:4972-80. 2008

Detail Information

Publications1

  1. ncbi request reprint Ultra high-Q photonic crystal nanocavity design: the effect of a low-epsilon slab material
    Igal Bayn
    Department of Electrical Engineering and Microelectronics Research Center, Technion Haifa 32000, Israel
    Opt Express 16:4972-80. 2008
    ..In a double heterostructure design, a Q approximately 2.6 x 10(5) is obtained. The highest Q approximately 1.3 x 10(6) with V(m)=1.77 x (lambda/n)(3) in a local width modulation design is derived...