Samit K Ray

Summary

Country: India

Publications

  1. pmc Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
    Amit Prakash
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Rd, Kwei Shan, Tao Yuan 333, Taiwan
    Nanoscale Res Lett 8:220. 2013
  2. pmc Optical and electrical properties of undoped and doped Ge nanocrystals
    Samaresh Das
    Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
    Nanoscale Res Lett 7:143. 2012
  3. pmc Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides
    Samit K Ray
    Department of Physics and Meteorology, Indian Institute of Technology Kharagpur 721302, India
    Nanoscale Res Lett 6:224. 2011
  4. pmc Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
    Samaresh Das
    Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
    Nanoscale Res Lett 6:416. 2011

Collaborators

  • Samaresh Das
  • Santanu Manna
  • Amit Prakash
  • Achintya Dhar
  • Sheikh Ziaur Rahaman
  • Sandip Majumdar
  • Siddheswar Maikap
  • Rajkumar Singha
  • Rakesh Aluguri
  • Lorenzo Pavesi
  • Kaustuv Das
  • Arup Kumar Raychaudhuri
  • Raj Kumar Singha

Detail Information

Publications4

  1. pmc Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
    Amit Prakash
    Department of Electronic Engineering, Chang Gung University, 259 Wen Hwa 1st Rd, Kwei Shan, Tao Yuan 333, Taiwan
    Nanoscale Res Lett 8:220. 2013
    ..Under SET operation, Ge/GeOx nanofilaments (or NWs) form in the GeOx film. The diameter of the conducting nanofilament is approximately 40 nm, which is calculated using a new method...
  2. pmc Optical and electrical properties of undoped and doped Ge nanocrystals
    Samaresh Das
    Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
    Nanoscale Res Lett 7:143. 2012
    ..An improved charge storage characteristic with enhanced retention time has been achieved for the devices using VARIOT oxide floating gate...
  3. pmc Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides
    Samit K Ray
    Department of Physics and Meteorology, Indian Institute of Technology Kharagpur 721302, India
    Nanoscale Res Lett 6:224. 2011
    ....
  4. pmc Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
    Samaresh Das
    Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
    Nanoscale Res Lett 6:416. 2011
    ..The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail...