Androula Galiouna Nassiopoulou

Summary

Affiliation: NCSR Demokritos
Country: Greece

Publications

  1. pmc A thermoelectric generator using porous Si thermal isolation
    Emmanouel Hourdakis
    NCSR Demokritos IMEL, Terma Patriarchou Gregoriou, Aghia Paraskevi, Athens 15310, Greece
    Sensors (Basel) 13:13596-608. 2013
  2. pmc Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask
    Violetta Gianneta
    NCSR Demokritos IMEL, Terma Patriarhou Gregoriou, Aghia Paraskevi, Athens, 15310, Greece
    Nanoscale Res Lett 8:71. 2013
  3. pmc Novel air flow meter for an automobile engine using a Si sensor with porous Si thermal isolation
    Emmanouel Hourdakis
    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou, 15310 Aghia Paraskevi, Greece
    Sensors (Basel) 12:14838-50. 2012
  4. pmc Porous anodic alumina on galvanically grown PtSi layer for application in template-assisted Si nanowire growth
    Irini Michelakaki
    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou, Aghia Paraskevi, 153 10, Athens, Greece
    Nanoscale Res Lett 6:414. 2011
  5. pmc Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics
    Androula Galiouna Nassiopoulou
    Institute of Microelectronics IMEL, National Center for Scientific Research NCSR Demokritos, Terma Patriarhou Gregoriou, Aghia Paraskevi, Athens, 15310, Greece
    Nanoscale Res Lett 6:597. 2011

Collaborators

  • Emmanouel Hourdakis
  • Violetta Gianneta
  • Irini Michelakaki
  • Antonis Olziersky
  • Panagiotis Sarafis
  • Eleni Stavrinidou
  • Nikos Frangis
  • Katerina Breza

Detail Information

Publications6

  1. pmc A thermoelectric generator using porous Si thermal isolation
    Emmanouel Hourdakis
    NCSR Demokritos IMEL, Terma Patriarchou Gregoriou, Aghia Paraskevi, Athens 15310, Greece
    Sensors (Basel) 13:13596-608. 2013
    ..For a mesoporous Si layer of 60% porosity and a macroscopic temperature differential of 10 K, an output power of 0.39 μW/cm2 was measured for a 50 μm thick porous Si layer. ..
  2. pmc Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask
    Violetta Gianneta
    NCSR Demokritos IMEL, Terma Patriarhou Gregoriou, Aghia Paraskevi, Athens, 15310, Greece
    Nanoscale Res Lett 8:71. 2013
    ..This is possible both on large areas and on restricted pre-defined areas on the Si wafer. PACS: 78.67.Rb, 81.07.-b, 61.46.-w...
  3. pmc Novel air flow meter for an automobile engine using a Si sensor with porous Si thermal isolation
    Emmanouel Hourdakis
    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou, 15310 Aghia Paraskevi, Greece
    Sensors (Basel) 12:14838-50. 2012
    ..It shows an almost linear response in a large flow range between –6,500 kg/h and +6,500 kg/h, which is an order of magnitude larger than the ones usually encountered in an automobile engine...
  4. pmc Porous anodic alumina on galvanically grown PtSi layer for application in template-assisted Si nanowire growth
    Irini Michelakaki
    Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou, Aghia Paraskevi, 153 10, Athens, Greece
    Nanoscale Res Lett 6:414. 2011
    ..Cross sectional HRTEM images combined with electron diffraction (ED) were used to characterize the different interfaces between Si, PtSi and porous anodic alumina...
  5. pmc Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics
    Androula Galiouna Nassiopoulou
    Institute of Microelectronics IMEL, National Center for Scientific Research NCSR Demokritos, Terma Patriarhou Gregoriou, Aghia Paraskevi, Athens, 15310, Greece
    Nanoscale Res Lett 6:597. 2011
    ..38 eV in the case of lithographically patterned areas). The higher etch rate on lithographically defined areas is mainly attributed to Si surface modification during the photolithographic process.PACS: 68; 68.65-k...