Ulrich Wulf

Summary

Country: Germany

Publications

  1. ncbi Scaling properties of ballistic nano-transistors
    Ulrich Wulf
    BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
    Nanoscale Res Lett 6:365. 2011

Detail Information

Publications1

  1. ncbi Scaling properties of ballistic nano-transistors
    Ulrich Wulf
    BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
    Nanoscale Res Lett 6:365. 2011
    ..In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade...