- Scaling properties of ballistic nano-transistorsUlrich Wulf
BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
Nanoscale Res Lett 6:365. 2011..In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade...