Rainer Waser

Summary

Country: Germany

Publications

  1. ncbi Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
    Christina Schindler
    , and JARA Fundamentals of Future Information Technology, , 52425, , Germany
    Phys Chem Chem Phys 11:5974-9. 2009

Collaborators

  • Christina Schindler
  • Ilia Valov

Detail Information

Publications1

  1. ncbi Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
    Christina Schindler
    , and JARA Fundamentals of Future Information Technology, , 52425, , Germany
    Phys Chem Chem Phys 11:5974-9. 2009
    ..After forming, resistive switching with a write current of only 1 nA was observed demonstrating the feasibility of the fabrication of memory cells with ultra low power consumption...