- Alignment of semiconductor nanowires using ion beamsChristian Borschel
Institute for Solid State Physics, University of Jena, Max Wien Platz 1, 07743 Jena, Germany
Small 5:2576-80. 2009..Defect formation (vacancies and interstitials) within the implantation cascade is identified as the key mechanism for bending. Monte Carlo simulations of the implantation are presented to substantiate the results...
- A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditionsChristian Borschel
Institute for Solid State Physics, Jena University, Max Wien Platz 1, 07743 Jena, Germany
Nano Lett 11:3935-40. 2011..Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system...
- Permanent bending and alignment of ZnO nanowiresChristian Borschel
Institute for Solid State Physics, Friedrich Schiller University Jena, Max Wien Platz 1, 07743 Jena, Germany
Nanotechnology 22:185307. 2011..Detailed structural characterization identifies dislocations to relax stresses and make the bending and alignment permanent, even surviving annealing procedures...