Christian Borschel

Summary

Affiliation: Friedrich Schiller University
Country: Germany

Publications

  1. doi Alignment of semiconductor nanowires using ion beams
    Christian Borschel
    Institute for Solid State Physics, University of Jena, Max Wien Platz 1, 07743 Jena, Germany
    Small 5:2576-80. 2009
  2. ncbi A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions
    Christian Borschel
    Institute for Solid State Physics, Jena University, Max Wien Platz 1, 07743 Jena, Germany
    Nano Lett 11:3935-40. 2011
  3. ncbi Permanent bending and alignment of ZnO nanowires
    Christian Borschel
    Institute for Solid State Physics, Friedrich Schiller University Jena, Max Wien Platz 1, 07743 Jena, Germany
    Nanotechnology 22:185307. 2011

Detail Information

Publications3

  1. doi Alignment of semiconductor nanowires using ion beams
    Christian Borschel
    Institute for Solid State Physics, University of Jena, Max Wien Platz 1, 07743 Jena, Germany
    Small 5:2576-80. 2009
    ..Defect formation (vacancies and interstitials) within the implantation cascade is identified as the key mechanism for bending. Monte Carlo simulations of the implantation are presented to substantiate the results...
  2. ncbi A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions
    Christian Borschel
    Institute for Solid State Physics, Jena University, Max Wien Platz 1, 07743 Jena, Germany
    Nano Lett 11:3935-40. 2011
    ..Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system...
  3. ncbi Permanent bending and alignment of ZnO nanowires
    Christian Borschel
    Institute for Solid State Physics, Friedrich Schiller University Jena, Max Wien Platz 1, 07743 Jena, Germany
    Nanotechnology 22:185307. 2011
    ..Detailed structural characterization identifies dislocations to relax stresses and make the bending and alignment permanent, even surviving annealing procedures...