B Eisenhawer

Summary

Country: Germany

Publications

  1. ncbi Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition
    Björn Eisenhawer
    Institute of Photonic Technology, Jena, Germany
    Nanotechnology 22:305604. 2011
  2. ncbi Increasing the efficiency of polymer solar cells by silicon nanowires
    B Eisenhawer
    Institute of Photonic Technology, Jena, Germany
    Nanotechnology 22:315401. 2011
  3. ncbi A time-resolved numerical study of the vapor-liquid-solid growth kinetics describing the initial nucleation phase as well as pulsed deposition processes
    Björn Eisenhawer
    Institute of Photonic Technology, Albert Einstein Strasse 9, D 07745 Jena, Germany
    Nano Lett 13:873-83. 2013
  4. ncbi Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging
    B Eisenhawer
    Institute of Photonic Technology, Albert Einstein Strasse 9, 07745 Jena, Germany
    Nanotechnology 22:075706. 2011

Detail Information

Publications4

  1. ncbi Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition
    Björn Eisenhawer
    Institute of Photonic Technology, Jena, Germany
    Nanotechnology 22:305604. 2011
    ....
  2. ncbi Increasing the efficiency of polymer solar cells by silicon nanowires
    B Eisenhawer
    Institute of Photonic Technology, Jena, Germany
    Nanotechnology 22:315401. 2011
    ..This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process...
  3. ncbi A time-resolved numerical study of the vapor-liquid-solid growth kinetics describing the initial nucleation phase as well as pulsed deposition processes
    Björn Eisenhawer
    Institute of Photonic Technology, Albert Einstein Strasse 9, D 07745 Jena, Germany
    Nano Lett 13:873-83. 2013
    ..In this work, we present a modeling approach for VLS NW growth based on numerical simulations, which is capable of describing the nucleation phase of the VLS growth process as well as a pulsed deposition process...
  4. ncbi Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging
    B Eisenhawer
    Institute of Photonic Technology, Albert Einstein Strasse 9, 07745 Jena, Germany
    Nanotechnology 22:075706. 2011
    ..As a further benefit, this doping procedure does not require the use of poisonous gases and may be applied to grow not only silicon NWs but also other kinds of doped semiconductor NWs, e.g. group III nitrides or arsenides...