Laurent Vivien

Summary

Country: France

Publications

  1. doi request reprint Zero-bias 40Gbit/s germanium waveguide photodetector on silicon
    Laurent Vivien
    Institut d Electronique Fondamentale IEF, Universite Paris Sud, CNRS, Orsay France
    Opt Express 20:1096-101. 2012
  2. ncbi request reprint 42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide
    Laurent Vivien
    Institut d Electronique Fondamentale IEF, CNRS UMR 8622, bât 220, Universite Paris Sud XI, F 91405, Orsay Cedex, France
    Opt Express 17:6252-7. 2009
  3. doi request reprint 40 Gbit/s low-loss silicon optical modulator based on a pipin diode
    Melissa Ziebell
    Institut d Electronique Fondamentale, Universite Paris Sud, CNRS UMR 8622, Orsay, France
    Opt Express 20:10591-6. 2012
  4. doi request reprint 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
    Papichaya Chaisakul
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS UMR 8622, bât 220, 91405 Orsay Cedex, France
    Opt Express 20:3219-24. 2012
  5. doi request reprint Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure
    Mohamed Saïd Rouifed
    Institut d Electronique Fondamentale, University Paris Sud, CNRS UMR 8622, bât 220, 91405 Orsay Cedex, France
    Opt Lett 37:3960-2. 2012
  6. doi request reprint High extinction ratio 10 Gbit/s silicon optical modulator
    Gilles Rasigade
    Institut d Electronique Fondamentale, Universite Paris Sud, CNRS, Orsay, France
    Opt Express 19:5827-32. 2011
  7. doi request reprint Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions
    Melissa Ziebell
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS, bât 220, F 91405 Orsay France
    Opt Express 19:14690-5. 2011
  8. doi request reprint Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides
    Papichaya Chaisakul
    Institut d Electronique Fondamentale, Universite Paris Sud, CNRS UMR 8622, Batiment 220, 91405 Orsay Cedex, France
    Opt Lett 36:1794-6. 2011
  9. ncbi request reprint High efficiency silicon nitride surface grating couplers
    Guillaume Maire
    Institut d Electronique Fondamentale, CNRS UMR 8622, bât 220, Universite Paris Sud 11, F 91405 ORSAY cedex France
    Opt Express 16:328-33. 2008
  10. ncbi request reprint Light emission in silicon from carbon nanotubes
    Etienne Gaufrès
    Institut d Electronique Fondamentale, CNRS UMR 8622, Univ Paris Sud, Orsay, France
    ACS Nano 6:3813-9. 2012

Collaborators

  • Delphine Marris-Morini
  • Kristinn B Gylfason
  • Eric Cassan
  • Xavier Le Roux
  • Papichaya Chaisakul
  • Gilles Rasigade
  • Melissa Ziebell
  • Daniel Chrastina
  • Samson Edmond
  • Giovanni Isella
  • Etienne Gaufrès
  • Mohamed Saïd Rouifed
  • Jean René Coudevylle
  • Jean Marc Fedeli
  • Jacopo Frigerio
  • Khanh Van Do
  • David Bouville
  • Paul Crozat
  • Philippe Grosse
  • Nicolas Izard
  • Guillaume Maire
  • Alexandre Beck
  • Adrien Noury
  • Frédéric Milesi
  • Johann Osmond
  • Said Kazaoui
  • Eleonora Gatti
  • Domenico Giannone
  • Guillaume Sattler
  • Hans Sohlström
  • Daniel Hill
  • Benito Sanchez
  • Andrzej Kazmierczak
  • Amadeu Griol

Detail Information

Publications15

  1. doi request reprint Zero-bias 40Gbit/s germanium waveguide photodetector on silicon
    Laurent Vivien
    Institut d Electronique Fondamentale IEF, Universite Paris Sud, CNRS, Orsay France
    Opt Express 20:1096-101. 2012
    ..In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm...
  2. ncbi request reprint 42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide
    Laurent Vivien
    Institut d Electronique Fondamentale IEF, CNRS UMR 8622, bât 220, Universite Paris Sud XI, F 91405, Orsay Cedex, France
    Opt Express 17:6252-7. 2009
    ..55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology...
  3. doi request reprint 40 Gbit/s low-loss silicon optical modulator based on a pipin diode
    Melissa Ziebell
    Institut d Electronique Fondamentale, Universite Paris Sud, CNRS UMR 8622, Orsay, France
    Opt Express 20:10591-6. 2012
    ..Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point...
  4. doi request reprint 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
    Papichaya Chaisakul
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS UMR 8622, bât 220, 91405 Orsay Cedex, France
    Opt Express 20:3219-24. 2012
    ..This demonstrates the potentiality of Ge/SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections...
  5. doi request reprint Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure
    Mohamed Saïd Rouifed
    Institut d Electronique Fondamentale, University Paris Sud, CNRS UMR 8622, bât 220, 91405 Orsay Cedex, France
    Opt Lett 37:3960-2. 2012
    ..3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices...
  6. doi request reprint High extinction ratio 10 Gbit/s silicon optical modulator
    Gilles Rasigade
    Institut d Electronique Fondamentale, Universite Paris Sud, CNRS, Orsay, France
    Opt Express 19:5827-32. 2011
    ..The phase-shifter is a 1.8 mm-long PIPIN diode which is integrated in a Mach Zehnder interferometer. 8.1 dB Extinction Ratio at 10 Gbit/s is obtained simultaneously with optical loss as low as 6 dB...
  7. doi request reprint Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions
    Melissa Ziebell
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS, bât 220, F 91405 Orsay France
    Opt Express 19:14690-5. 2011
    ..VπLπ of about 2.5 V × cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB...
  8. doi request reprint Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides
    Papichaya Chaisakul
    Institut d Electronique Fondamentale, Universite Paris Sud, CNRS UMR 8622, Batiment 220, 91405 Orsay Cedex, France
    Opt Lett 36:1794-6. 2011
    ..Polarization dependence of the absorption spectra of the Ge/SiGe MQWs is clearly observed. The planar waveguides exhibit a high extinction ratio and low insertion loss over a wide spectral range for TE polarization...
  9. ncbi request reprint High efficiency silicon nitride surface grating couplers
    Guillaume Maire
    Institut d Electronique Fondamentale, CNRS UMR 8622, bât 220, Universite Paris Sud 11, F 91405 ORSAY cedex France
    Opt Express 16:328-33. 2008
    ..The influence of the duty ratio of the grating has also been investigated: maximum coupling efficiency was obtained at 50 % duty ratio...
  10. ncbi request reprint Light emission in silicon from carbon nanotubes
    Etienne Gaufrès
    Institut d Electronique Fondamentale, CNRS UMR 8622, Univ Paris Sud, Orsay, France
    ACS Nano 6:3813-9. 2012
    ..3 μm. This represents the first milestone in the development of photonics based on carbon nanotubes on silicon...
  11. doi request reprint Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures
    Papichaya Chaisakul
    Institut d Electronique Fondamentale, Universite Paris Sud, CNRS, 91405 Orsay, France
    Opt Lett 35:2913-5. 2010
    ..Both Stark shift and reduction of exciton absorption peak are observed. Differential transmission indicates that there is no thermal contribution to these effects...
  12. doi request reprint Optical microcavity with semiconducting single-wall carbon nanotubes
    Etienne Gaufrès
    Institut d Electronique Fondamentale, CNRS UMR 8622, Universite Paris Sud 11, 91405 Orsay, France
    Opt Express 18:5740-5. 2010
    ..3 microm. Such results prove the great potential of carbon nanotubes for photonic applications...
  13. ncbi request reprint Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure
    Delphine Marris-Morini
    Institut d Electronique Fondamentale, Université Paris Sud CNRS, bât 220, F 91405 ORSAY cedex France
    Opt Express 16:334-9. 2008
    ..This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast ratio of 14 dB for a 3 dB bandwidth of 10 GHz...
  14. ncbi request reprint Experimental demonstration of light bending at optical frequencies using a non-homogenizable graded photonic crystal
    Khanh Van Do
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS, bât 220, F 91405 Orsay cedex, France
    Opt Express 20:4776-83. 2012
    ..It also constitutes an alternative solution to the use of photonic metamaterials combining dielectric and metallic materials with sub-wavelength unit cells...
  15. doi request reprint Compact wavelength-insensitive fabrication-tolerant silicon-on-insulator beam splitter
    Gilles Rasigade
    Institut d Electronique Fondamentale, Universite Paris Sud, CNRS, 91405 Orsay, France
    Opt Lett 35:3700-2. 2010
    ..Excess loss lower than 1 dB is experimentally obtained for star coupler lengths from 0.5 to 1 μm. Output balance is better than 1 dB, which is the measurement accuracy, and broadband transmission is obtained over 90 nm...