Delphine Marris-Morini

Summary

Country: France

Publications

  1. ncbi Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure
    Delphine Marris-Morini
    Institut d Electronique Fondamentale, Université Paris Sud CNRS, bât 220, F 91405 ORSAY cedex France
    Opt Express 16:334-9. 2008
  2. ncbi Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure
    Mohamed Saïd Rouifed
    Institut d Electronique Fondamentale, University Paris Sud, CNRS UMR 8622, bât 220, 91405 Orsay Cedex, France
    Opt Lett 37:3960-2. 2012
  3. ncbi 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
    Papichaya Chaisakul
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS UMR 8622, bât 220, 91405 Orsay Cedex, France
    Opt Express 20:3219-24. 2012
  4. ncbi Experimental demonstration of light bending at optical frequencies using a non-homogenizable graded photonic crystal
    Khanh Van Do
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS, bât 220, F 91405 Orsay cedex, France
    Opt Express 20:4776-83. 2012
  5. ncbi High efficiency silicon nitride surface grating couplers
    Guillaume Maire
    Institut d Electronique Fondamentale, CNRS UMR 8622, bât 220, Universite Paris Sud 11, F 91405 ORSAY cedex France
    Opt Express 16:328-33. 2008
  6. ncbi Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions
    Melissa Ziebell
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS, bât 220, F 91405 Orsay France
    Opt Express 19:14690-5. 2011

Collaborators

  • Laurent Vivien
  • Kristinn B Gylfason
  • Xavier Le Roux
  • Mohamed Saïd Rouifed
  • Papichaya Chaisakul
  • Eric Cassan
  • Daniel Chrastina
  • Samson Edmond
  • Khanh Van Do
  • Giovanni Isella
  • Jacopo Frigerio
  • Jean René Coudevylle
  • Melissa Ziebell
  • Guillaume Maire
  • Philippe Grosse
  • Paul Crozat
  • Gilles Rasigade
  • Jean Marc Fedeli
  • Andrzej Kazmierczak
  • Benito Sanchez
  • Domenico Giannone
  • Daniel Hill
  • Amadeu Griol
  • Guillaume Sattler
  • Hans Sohlström

Detail Information

Publications6

  1. ncbi Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure
    Delphine Marris-Morini
    Institut d Electronique Fondamentale, Université Paris Sud CNRS, bât 220, F 91405 ORSAY cedex France
    Opt Express 16:334-9. 2008
    ..This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast ratio of 14 dB for a 3 dB bandwidth of 10 GHz...
  2. ncbi Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure
    Mohamed Saïd Rouifed
    Institut d Electronique Fondamentale, University Paris Sud, CNRS UMR 8622, bât 220, 91405 Orsay Cedex, France
    Opt Lett 37:3960-2. 2012
    ..3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices...
  3. ncbi 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
    Papichaya Chaisakul
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS UMR 8622, bât 220, 91405 Orsay Cedex, France
    Opt Express 20:3219-24. 2012
    ..This demonstrates the potentiality of Ge/SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections...
  4. ncbi Experimental demonstration of light bending at optical frequencies using a non-homogenizable graded photonic crystal
    Khanh Van Do
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS, bât 220, F 91405 Orsay cedex, France
    Opt Express 20:4776-83. 2012
    ..It also constitutes an alternative solution to the use of photonic metamaterials combining dielectric and metallic materials with sub-wavelength unit cells...
  5. ncbi High efficiency silicon nitride surface grating couplers
    Guillaume Maire
    Institut d Electronique Fondamentale, CNRS UMR 8622, bât 220, Universite Paris Sud 11, F 91405 ORSAY cedex France
    Opt Express 16:328-33. 2008
    ..The influence of the duty ratio of the grating has also been investigated: maximum coupling efficiency was obtained at 50 % duty ratio...
  6. ncbi Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions
    Melissa Ziebell
    Institut d Electronique Fondamentale, Univ Paris Sud, CNRS, bât 220, F 91405 Orsay France
    Opt Express 19:14690-5. 2011
    ..VπLπ of about 2.5 V × cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB...