Jean Paul Kleider

Summary

Country: France

Publications

  1. ncbi Characterization of silicon heterojunctions for solar cells
    Jean Paul Kleider
    Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P Sud, UPMC Univ Paris 6, 11 rue Joliot Curie, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France
    Nanoscale Res Lett 6:152. 2011
  2. ncbi Conductive-probe atomic force microscopy characterization of silicon nanowire
    Jose Alvarez
    Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P Sud, UPMC Univ Paris 6, 11 rue Joliot Curie, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France
    Nanoscale Res Lett 6:110. 2011

Collaborators

  • Jose Alvarez
  • Marie Estelle Gueunier-Farret
  • Linwei Yu
  • Jean Pierre Simonato
  • Emmanuelle Rouvière
  • Irène Ngo
  • Céline Mouchet
  • Pere Rocai Cabarrocas
  • Caroline Celle
  • Simon Perraud

Detail Information

Publications2

  1. ncbi Characterization of silicon heterojunctions for solar cells
    Jean Paul Kleider
    Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P Sud, UPMC Univ Paris 6, 11 rue Joliot Curie, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France
    Nanoscale Res Lett 6:152. 2011
    ..These are intimately related to the band offsets, which allows us to determine these parameters with good precision...
  2. ncbi Conductive-probe atomic force microscopy characterization of silicon nanowire
    Jose Alvarez
    Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P Sud, UPMC Univ Paris 6, 11 rue Joliot Curie, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France
    Nanoscale Res Lett 6:110. 2011
    ..The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated...