Emmanuel Jacques

Summary

Country: France

Publications

  1. ncbi Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films
    Emmanuel Jacques
    Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France
    Nanoscale Res Lett 6:170. 2011

Detail Information

Publications1

  1. ncbi Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films
    Emmanuel Jacques
    Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France
    Nanoscale Res Lett 6:170. 2011
    ..The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content...