Gaël Gautier

Summary

Country: France

Publications

  1. pmc Non-oxidized porous silicon-based power AC switch peripheries
    Samuel Menard
    Universite Francois Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
    Nanoscale Res Lett 7:566. 2012
  2. pmc Evaluation of mesoporous silicon thermal conductivity by electrothermal finite element simulation
    Laurent Siegert
    Laboratoire de Microelectronique de Puissance, GREMAN, Universite de Tours, 16 Rue Pierre et Marie Curie, BP 7155, Tours, 37071, France
    Nanoscale Res Lett 7:427. 2012
  3. pmc Plasma-deposited fluoropolymer film mask for local porous silicon formation
    Thomas Defforge
    Universite Francois Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
    Nanoscale Res Lett 7:344. 2012
  4. pmc Copper-selective electrochemical filling of macropore arrays for through-silicon via applications
    Thomas Defforge
    Universite Francois Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
    Nanoscale Res Lett 7:375. 2012
  5. pmc Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces
    Gaël Gautier
    GREMAN, UMR CNRS 7347, Universite de Tours, 16 rue P, et M, Curie, Tours Cedex 2, 37071, France
    Nanoscale Res Lett 7:367. 2012
  6. pmc RF performances of inductors integrated on localized p+-type porous silicon regions
    Marie Capelle
    Universite Francois Rabelais de Tours, GREMAN, UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours, Cedex 2, 37071, France
    Nanoscale Res Lett 7:523. 2012

Collaborators

  • Marie Capelle
  • Thomas Defforge
  • Jérôme Billoué
  • Laurent Siegert
  • François Tran-Van
  • Samuel Menard
  • Fabrice Roqueta
  • Patrick Poveda
  • Marianne Diatta
  • Angélique Fèvre
  • Damien Valente
  • Vladimir Lysenko

Detail Information

Publications6

  1. pmc Non-oxidized porous silicon-based power AC switch peripheries
    Samuel Menard
    Universite Francois Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
    Nanoscale Res Lett 7:566. 2012
    ..Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries...
  2. pmc Evaluation of mesoporous silicon thermal conductivity by electrothermal finite element simulation
    Laurent Siegert
    Laboratoire de Microelectronique de Puissance, GREMAN, Universite de Tours, 16 Rue Pierre et Marie Curie, BP 7155, Tours, 37071, France
    Nanoscale Res Lett 7:427. 2012
    ..This methodology can be used to easily determine the thermal conductivity value for various porous silicon morphologies...
  3. pmc Plasma-deposited fluoropolymer film mask for local porous silicon formation
    Thomas Defforge
    Universite Francois Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
    Nanoscale Res Lett 7:344. 2012
    ..Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates...
  4. pmc Copper-selective electrochemical filling of macropore arrays for through-silicon via applications
    Thomas Defforge
    Universite Francois Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
    Nanoscale Res Lett 7:375. 2012
    ..Using this process, high density conductive via (4.5 × 105 cm-²) was carried out. The conductive paths were then electrically characterized, and a resistance equal to 32 mΩ/copper-filled macropore was determined...
  5. pmc Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces
    Gaël Gautier
    GREMAN, UMR CNRS 7347, Universite de Tours, 16 rue P, et M, Curie, Tours Cedex 2, 37071, France
    Nanoscale Res Lett 7:367. 2012
    ..We've also observed the evolution of the potential for a fixed applied current density. Finally, some wafer defects induced by polishing are clearly revealed at the sample surfaces even for very short etching times...
  6. pmc RF performances of inductors integrated on localized p+-type porous silicon regions
    Marie Capelle
    Universite Francois Rabelais de Tours, GREMAN, UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours, Cedex 2, 37071, France
    Nanoscale Res Lett 7:523. 2012
    ..These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate...