Jussi Rautiainen

Summary

Affiliation: Tampere University of Technology
Country: Finland

Publications

  1. ncbi Passively mode-locked GaInNAs disk laser operating at 1220 nm
    Jussi Rautiainen
    Optoelectronics Research Centre, Tampere University of Technology, P O Box 692, FIN 33101
    Opt Express 16:15964-9. 2008
  2. ncbi 2.7 W tunable orange-red GaInNAs semiconductor disk laser
    J Rautiainen
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Express 15:18345-50. 2007
  3. ncbi Optically pumped semiconductor quantum dot disk laser operating at 1180 nm
    Jussi Rautiainen
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Lett 35:694-6. 2010
  4. ncbi 2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser
    Jussi Rautiainen
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Lett 35:1935-7. 2010
  5. ncbi 1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser
    Antti Rantamäki
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Express 20:9046-51. 2012
  6. ncbi 1.3-microm optically-pumped semiconductor disk laser by wafer fusion
    Jari Lyytikäinen
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Express 17:9047-52. 2009

Collaborators

  • Jari Lyytikäinen
  • Antti Rantamäki
  • Oleg G Okhotnikov
  • Alexandru Mereuta
  • Eli Kapon
  • Alexei Sirbu

Detail Information

Publications6

  1. ncbi Passively mode-locked GaInNAs disk laser operating at 1220 nm
    Jussi Rautiainen
    Optoelectronics Research Centre, Tampere University of Technology, P O Box 692, FIN 33101
    Opt Express 16:15964-9. 2008
    ..The laser generated 5 ps optical pulses with an average output power up to 275 mW. Our demonstration provides an attractive approach for efficiently generating red-wavelengths through external cavity frequency doubling...
  2. ncbi 2.7 W tunable orange-red GaInNAs semiconductor disk laser
    J Rautiainen
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Express 15:18345-50. 2007
    ..Using a Fabry-Pérot glass etalon the emission wavelength could be tuned over an 8 nm spectral range...
  3. ncbi Optically pumped semiconductor quantum dot disk laser operating at 1180 nm
    Jussi Rautiainen
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Lett 35:694-6. 2010
    ..The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry...
  4. ncbi 2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser
    Jussi Rautiainen
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Lett 35:1935-7. 2010
    ..The gain enhancement achieved with two active elements comprising 39 layers of Stranski-Krastanov InGaAs quantum dots allows for intracavity frequency doubling delivering 2.5 W of orange radiation...
  5. ncbi 1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser
    Antti Rantamäki
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Express 20:9046-51. 2012
    ..g., in spectroscopy, atomic cooling and biophotonics...
  6. ncbi 1.3-microm optically-pumped semiconductor disk laser by wafer fusion
    Jari Lyytikäinen
    Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland
    Opt Express 17:9047-52. 2009
    ..The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures...