Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulatorPo Dong
Kotura Inc, 2630 corporate place, Monterey Park, CA, 91754, USA
Opt Express 17:22484-90. 2009
..5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of approximately 1000 microm(2)...
Submilliwatt, ultrafast and broadband electro-optic silicon switchesPo Dong
Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
Opt Express 18:25225-31. 2010
..We find that at the concentration of 10(16) cm(-3), the index change is about twice that calculated by the commonly used index change equation...
1x4 reconfigurable demultiplexing filter based on free-standing silicon racetrack resonatorsPo Dong
Kotura Inc, 2630 corporate place, Monterey Park, California 91754, USA
Opt Express 18:24504-9. 2010
..5 dB, respectively. The total power to achieve this performance is in the range of 1.84 mW to 2.4 mW. Such low-power, compact, and reconfigurable filters are particularly useful in chip-scale optical interconnects...
GHz-bandwidth optical filters based on high-order silicon ring resonatorsPo Dong
Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
Opt Express 18:23784-9. 2010
..Both second-order and fifth-order ring resonators are presented, which can find ready application in microwave/radio frequency signal processing...
Thermally tunable silicon racetrack resonators with ultralow tuning powerPo Dong
Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
Opt Express 18:20298-304. 2010
..The 10%-90% switching time is demonstrated to be ~170 µs. Such low-power tunable micro-resonators are particularly useful as multiplexing devices and wavelength-tunable silicon microcavity modulators...
High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltagePo Dong
Kotura, Inc, 2630 corporate place, Monterey Park, California 91754, USA
Opt Lett 35:3246-8. 2010
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Wavelength-tunable silicon microring modulatorPo Dong
Kotura Inc, 2630 corporate place, Monterey Park, CA, 91754, USA
Opt Express 18:10941-6. 2010
..4 mW/nm (2.4 mW is needed to tune the resonant wavelength by 1 nm). This device aims to solve the narrow bandwidth problem of silicon microcavity modulators and increase the data bandwidth in optical interconnect systems...
Low power and compact reconfigurable multiplexing devices based on silicon microring resonatorsPo Dong
Kotura Inc, Monterey Park, CA 91754, USA
Opt Express 18:9852-8. 2010
..Negligible thermal crosstalk is demonstrated for rings spaced by 15 microm, enabling compact multiplexing devices. The tuning time constant is demonstrated to be less than 10 micros...
Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulatorNing ning Feng
Kotura Inc, Monterey Park, CA 91754, USA
Opt Express 19:8715-20. 2011
..9-8.2 dB over the wavelength range of 1610-1640 nm. Subtracting the contribution of the transition loss, the Δα/α value for the fabricated device was estimated to be between 2.2 and 3.2 with an electric field around 55 kV/cm...
Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguidesNing ning Feng
Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
Opt Express 18:96-101. 2010
..5A/W. Further studies suggest that with a modified design the device is capable of achieving 1A/W external responsivity for both TE and TM polarizations and greater than 30GHz bandwidth...
30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguideNing ning Feng
Kotura Inc, 2630 corporate place, Monterey Park, California 91754, USA
Opt Express 19:7062-7. 2011
..3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate...
36 GHz submicron silicon waveguide germanium photodetectorShirong Liao
Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
Opt Express 19:10967-72. 2011
..6A/W to 0.95 A/W at 1550 nm with 36 GHz 3 dB bandwidth. We also demonstrate that a wider device with double offset contacts can achieve 1.05 A/W responsivity at 1550 nm and 20 GHz 3 dB bandwidth...
Thermally-efficient reconfigurable narrowband RF-photonic filterNing ning Feng
Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
Opt Express 18:24648-53. 2010
..By introducing thermal isolation trenching, we are able to achieve IIR, FIR or arbitrary mixed response with less than 120 mW average tuning power in a single RF-photonic unit cell filter...