Po Dong

Summary

Publications

  1. doi Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA, 91754, USA
    Opt Express 17:22484-90. 2009
  2. doi Submilliwatt, ultrafast and broadband electro-optic silicon switches
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:25225-31. 2010
  3. doi 1x4 reconfigurable demultiplexing filter based on free-standing silicon racetrack resonators
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, California 91754, USA
    Opt Express 18:24504-9. 2010
  4. doi GHz-bandwidth optical filters based on high-order silicon ring resonators
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:23784-9. 2010
  5. doi Thermally tunable silicon racetrack resonators with ultralow tuning power
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:20298-304. 2010
  6. doi High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage
    Po Dong
    Kotura, Inc, 2630 corporate place, Monterey Park, California 91754, USA
    Opt Lett 35:3246-8. 2010
  7. doi Wavelength-tunable silicon microring modulator
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA, 91754, USA
    Opt Express 18:10941-6. 2010
  8. doi Low power and compact reconfigurable multiplexing devices based on silicon microring resonators
    Po Dong
    Kotura Inc, Monterey Park, CA 91754, USA
    Opt Express 18:9852-8. 2010
  9. doi Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator
    Ning ning Feng
    Kotura Inc, Monterey Park, CA 91754, USA
    Opt Express 19:8715-20. 2011
  10. doi Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides
    Ning ning Feng
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:96-101. 2010

Collaborators

  • Xuezhe Zheng
  • A Agarwal
  • Guoliang Li
  • Xin Wang
  • Ying Luo
  • Ning ning Feng
  • Shirong Liao
  • Dazeng Feng
  • Hong Liang
  • Mehdi Asghari
  • Roshanak Shafiiha
  • Wei Qian
  • Cheng chih Kung
  • Joan Fong
  • Ashok V Krishnamoorthy
  • Yong Liu
  • Jack Cunningham
  • John E Cunningham
  • Paul Toliver
  • Dawei Zheng
  • Jonathan B Luff
  • Ron Menendez
  • Daniel C Lee
  • Ted K Woodward
  • Tom Banwell

Detail Information

Publications13

  1. doi Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA, 91754, USA
    Opt Express 17:22484-90. 2009
    ..5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of approximately 1000 microm(2)...
  2. doi Submilliwatt, ultrafast and broadband electro-optic silicon switches
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:25225-31. 2010
    ..We find that at the concentration of 10(16) cm(-3), the index change is about twice that calculated by the commonly used index change equation...
  3. doi 1x4 reconfigurable demultiplexing filter based on free-standing silicon racetrack resonators
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, California 91754, USA
    Opt Express 18:24504-9. 2010
    ..5 dB, respectively. The total power to achieve this performance is in the range of 1.84 mW to 2.4 mW. Such low-power, compact, and reconfigurable filters are particularly useful in chip-scale optical interconnects...
  4. doi GHz-bandwidth optical filters based on high-order silicon ring resonators
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:23784-9. 2010
    ..Both second-order and fifth-order ring resonators are presented, which can find ready application in microwave/radio frequency signal processing...
  5. doi Thermally tunable silicon racetrack resonators with ultralow tuning power
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:20298-304. 2010
    ..The 10%-90% switching time is demonstrated to be ~170 µs. Such low-power tunable micro-resonators are particularly useful as multiplexing devices and wavelength-tunable silicon microcavity modulators...
  6. doi High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage
    Po Dong
    Kotura, Inc, 2630 corporate place, Monterey Park, California 91754, USA
    Opt Lett 35:3246-8. 2010
    ....
  7. doi Wavelength-tunable silicon microring modulator
    Po Dong
    Kotura Inc, 2630 corporate place, Monterey Park, CA, 91754, USA
    Opt Express 18:10941-6. 2010
    ..4 mW/nm (2.4 mW is needed to tune the resonant wavelength by 1 nm). This device aims to solve the narrow bandwidth problem of silicon microcavity modulators and increase the data bandwidth in optical interconnect systems...
  8. doi Low power and compact reconfigurable multiplexing devices based on silicon microring resonators
    Po Dong
    Kotura Inc, Monterey Park, CA 91754, USA
    Opt Express 18:9852-8. 2010
    ..Negligible thermal crosstalk is demonstrated for rings spaced by 15 microm, enabling compact multiplexing devices. The tuning time constant is demonstrated to be less than 10 micros...
  9. doi Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator
    Ning ning Feng
    Kotura Inc, Monterey Park, CA 91754, USA
    Opt Express 19:8715-20. 2011
    ..9-8.2 dB over the wavelength range of 1610-1640 nm. Subtracting the contribution of the transition loss, the Δα/α value for the fabricated device was estimated to be between 2.2 and 3.2 with an electric field around 55 kV/cm...
  10. doi Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides
    Ning ning Feng
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:96-101. 2010
    ..5A/W. Further studies suggest that with a modified design the device is capable of achieving 1A/W external responsivity for both TE and TM polarizations and greater than 30GHz bandwidth...
  11. doi 30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide
    Ning ning Feng
    Kotura Inc, 2630 corporate place, Monterey Park, California 91754, USA
    Opt Express 19:7062-7. 2011
    ..3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate...
  12. doi 36 GHz submicron silicon waveguide germanium photodetector
    Shirong Liao
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 19:10967-72. 2011
    ..6A/W to 0.95 A/W at 1550 nm with 36 GHz 3 dB bandwidth. We also demonstrate that a wider device with double offset contacts can achieve 1.05 A/W responsivity at 1550 nm and 20 GHz 3 dB bandwidth...
  13. doi Thermally-efficient reconfigurable narrowband RF-photonic filter
    Ning ning Feng
    Kotura Inc, 2630 corporate place, Monterey Park, CA 91754, USA
    Opt Express 18:24648-53. 2010
    ..By introducing thermal isolation trenching, we are able to achieve IIR, FIR or arbitrary mixed response with less than 120 mW average tuning power in a single RF-photonic unit cell filter...