Arash Dehzangi

Summary

Publications

  1. pmc Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET
    Mohd F Mohd Razip Wee
    Institute of Electronics, Microelectronics and Nanotechnology IEMN, University Lille 1, Villeneuve d Ascq, France Institute of Microengineering and Nanoelectronics IMEN, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
    PLoS ONE 8:e82731. 2013
  2. pmc Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
    Arash Dehzangi
    Department of Physics, Faculty of Science, Universiti Putra Malaysia, Serdang, Selangor 43400, Malaysia
    Nanoscale Res Lett 7:381. 2012
  3. pmc Impact of parameter variation in fabrication of nanostructure by atomic force microscopy nanolithography
    Arash Dehzangi
    Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
    PLoS ONE 8:e65409. 2013
  4. pmc Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography
    Farhad Larki
    Department of Physics, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
    Beilstein J Nanotechnol 3:817-23. 2012
  5. pmc Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
    Farhad Larki
    Institute of Microengineering and Nanoelectronics IMEN, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
    PLoS ONE 9:e95182. 2014

Collaborators

  • Sabar D Hutagalung
  • Farhad Larki
  • Mohd F Mohd Razip Wee
  • Burhanuddin Yeop Majlis
  • Mohd Nizar Hamidon
  • Sawal Hamid Md Ali
  • Azman Jalar
  • Md Shabiul Islam
  • Burhanuddin Y Majlis
  • Nicolas Wichmann
  • Sylvain Bollaert
  • Ahmad Makarimi Abdullah
  • Mohd N Hamidon
  • Elias Saion
  • Jumiah Hassan
  • Alam Abedini

Detail Information

Publications5

  1. pmc Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET
    Mohd F Mohd Razip Wee
    Institute of Electronics, Microelectronics and Nanotechnology IEMN, University Lille 1, Villeneuve d Ascq, France Institute of Microengineering and Nanoelectronics IMEN, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
    PLoS ONE 8:e82731. 2013
    ..The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared...
  2. pmc Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
    Arash Dehzangi
    Department of Physics, Faculty of Science, Universiti Putra Malaysia, Serdang, Selangor 43400, Malaysia
    Nanoscale Res Lett 7:381. 2012
    ..The charge transmission in devices is also investigated in simple model according to a junctionless transistor principal...
  3. pmc Impact of parameter variation in fabrication of nanostructure by atomic force microscopy nanolithography
    Arash Dehzangi
    Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
    PLoS ONE 8:e65409. 2013
    ..The etching processes are accurately optimized by 30%wt. KOH +10%vol. IPA in appropriate time, temperature, and humidity...
  4. pmc Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography
    Farhad Larki
    Department of Physics, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
    Beilstein J Nanotechnol 3:817-23. 2012
    ..Redistribution of the carriers due to the electric field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current...
  5. pmc Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors
    Farhad Larki
    Institute of Microengineering and Nanoelectronics IMEN, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
    PLoS ONE 9:e95182. 2014
    ..However, the electric field is mainly responsible for variation of the characteristics when the source/drain extension is changed. ..