Karel Zdansky

Summary

Country: Czech Republic

Publications

  1. pmc Graphite/InP and graphite/GaN Schottky barriers with electrophoretically deposited Pd or Pt nanoparticles for hydrogen detection
    Karel Zdansky
    Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, Prague 8, 18251, Czech Republic
    Nanoscale Res Lett 7:415. 2012
  2. pmc Palladium nanoparticles on InP for hydrogen detection
    Ondrej Cernohorsky
    Department of Physical Electronics, Czech Technical University, V Holesovickach 2, Prague, Czeck Republic
    Nanoscale Res Lett 6:410. 2011
  3. pmc Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
    Karel Zdansky
    Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Prague 8, Czech Republic
    Nanoscale Res Lett 6:490. 2011

Collaborators

  • Ondrej Cernohorsky
  • Pavel Kacerovsky
  • Jiri Zavadil
  • Kateřina Piksová

Detail Information

Publications3

  1. pmc Graphite/InP and graphite/GaN Schottky barriers with electrophoretically deposited Pd or Pt nanoparticles for hydrogen detection
    Karel Zdansky
    Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, Prague 8, 18251, Czech Republic
    Nanoscale Res Lett 7:415. 2012
    ..That was a good precondition for the high sensitivity of the diodes to hydrogen, and indeed, high sensitivity to hydrogen, with the detection limit better than 1 ppm, was proved...
  2. pmc Palladium nanoparticles on InP for hydrogen detection
    Ondrej Cernohorsky
    Department of Physical Electronics, Czech Technical University, V Holesovickach 2, Prague, Czeck Republic
    Nanoscale Res Lett 6:410. 2011
    ..Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored...
  3. pmc Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
    Karel Zdansky
    Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Prague 8, Czech Republic
    Nanoscale Res Lett 6:490. 2011
    ..The diodes, besides this extremely high sensitivity, have been temporally stable and of inexpensive production. Relatively more expensive GaN diodes have potential for functionality at high temperatures...