Dongsheng LiSummaryAffiliation: Zhejiang University Country: China Publications
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Detail Information
Publications
Evolution of electroluminescence from silicon nitride light-emitting devices via nanostructural silverDongsheng Li
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Nanoscale 5:3435-40. 2013..The evolution of EL from the SiNx-based LEDs via the addition of silver nanostructures is proposed...
The modulation on luminescence of Er3+-doped silicon-rich oxide films by the structure evolution of silicon nanoclustersLu Jin
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People s Republic of China
Nanoscale Res Lett 8:34. 2013..Optimization of the microstructures of Si NCs is performed, and the preferential optical performance for both Si NCs and Er3+ could be achieved when Si NCs were separated in microstructures...- The coupling between localized surface plasmons and excitons via Purcell effectFeng Wang
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People s Republic of China
Nanoscale Res Lett 7:669. 2012..Our work may provide a deep comprehension on the coupling between LSPs and excitons, which is not limited to a certain luminescence material but with unconfined structures... - Electrically tunable electroluminescence from SiN(x)-based light-emitting devicesDongsheng Li
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Opt Express 20:17359-66. 2012.... - Structure and luminescence evolution of annealed Europium-doped silicon oxides filmsDongsheng Li
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, People s Republic of China
Opt Express 18:27191-6. 2010.... - Shape and phase control of CdS nanocrystals using cationic surfactant in noninjection synthesisYu Zou
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People s Republic of China
Nanoscale Res Lett 6:374. 2011..In addition, it was found that the multi-armed CdS nanocrystals lost quantum confinement effect because of the increase of the size with the increase of the concentration of CTAC... - Noninjection Synthesis of CdS and Alloyed CdSxSe1-xNanocrystals Without Nucleation InitiatorsYu Zou
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, People s Republic of China
Nanoscale Res Lett 5:966-71. 2010..The optical properties of the alloyed CdSxSe1-x nanocrystals can be tuned by adjusting the S/Se feed molar ratios. This synthetic approach developed is highly reproducible and can be readily scaled up for potential industrial production... - Optimization of the electroluminescence from SiNx-based light-emitting devices by modulating the size and morphology of silver nanostructuresFeng Wang
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Opt Express 21:1675-86. 2013..Our work may provide an alternative approach for the fabrication of Si-based light sources with promising luminescence efficiency... 
Electrically pumped ultraviolet random lasing from ZnO-based metal-insulator-semiconductor devices: dependence on carrier transportPeiliang Chen
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People s Republic of China
Opt Express 17:4712-7. 2009..The reason for the effect of NDR on the random lasing from the devices has been tentatively explored...- Electric-field-induced random lasing from ZnO and Mg0.1Zn0.9O films optically pumped with an extremely low intensityPeiliang Chen
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Opt Express 17:18513-7. 2009..It is believed that the role of electric-field exerted on the films is similar to that of increasing optical pump intensity, in terms of increasing the amount of non-equilibrium electrons in the near-surface regions of films... - Enhancement of orange-yellow electroluminescence extraction from SiNx light-emitting devices by silver nanostructuresFeng Wang
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Opt Express 21:846-54. 2013..Our work may provide a promising approach to improve the EQE of LEDs, which is not limited to SiNx matrix... - Preparation of echinus-like SiO2@Ag structures with the aid of the HCP phaseTao Liu
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, People s Republic of China
Chem Commun (Camb) 47:5169-71. 2011..These silver rods have a rare HCP structure, while the initial silver nuclei have a FCC structure. The rapid and free growth of silver nuclei resulted in the appearance of the HCP phase... - Magnesium catalyzed growth of SiO(2) hierarchical nanostructures by a thermal evaporation processZhihong Liu
State Key Lab of Silicon Materials and Department of Materials and Engineering, Zhejiang University, Hangzhou 310027, People s Republic of China
Nanotechnology 19:165601. 2008..Finally, the growth mechanism and PL emission of SiO(2) hierarchical nanostructures have been preliminarily discussed... - Electrophotoluminescence of sol-gel derived ZnO film: effect of electric field on near-band-edge photoluminescencePeiliang Chen
Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Opt Express 17:11434-9. 2009..6 to approximately 374.9 nm no matter how current changes. The mechanism for the effect of bias on the intensity and position of NBE PL of the ZnO film is discussed... - Fabrication of flower-like silver structures through anisotropic growthTao Liu
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People s Republic of China
Langmuir 27:6211-7. 2011..It is also found that the concentration of reactants, the kind of reducing agents and the sequence of adding reactants can influence the morphology and phase constitution of the final products... - Growth of In2O3 Nanowires Catalyzed by Cu via a Solid-Liquid-Solid MechanismGuanbi Chen
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People s Republic of China
Nanoscale Res Lett 5:898-903. 2010..Moreover, photoluminescence (PL) peaks of In2O3 nanowires at 412 and 523 nm were observed at room temperature, and their mechanism is also discussed... - The modulation of surface texture for single-crystalline Si solar cells using calibrated silver nanoparticles as a catalystXin Gu
State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People s Republic of China
Nanotechnology 22:025703. 2011..These results are interesting for us to understand the application of nanotechnology on the silicon solar cell... - Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on SiXiangyang Ma
Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, ZhejiangUniversity, Hangzhou 310027, China
Opt Express 17:14426-33. 2009..Therefore, random lasing proceeds due to optical gain achieved by the stimulated emission and multiple scattering...