Bao Ping Zhang

Summary

Affiliation: Xiamen University
Country: China

Publications

  1. doi request reprint Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers
    Shaoqiang Chen
    Institute for Solid State Physics, University of Tokyo, 5 1 5 Kashiwanoha, Kashiwa, Chiba 277 8581, Japan
    Sci Rep 4:4325. 2014
  2. pmc Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells
    Xue Qin Lv
    Department of Physics, Xiamen University, Xiamen, 361005, People s Republic of China
    Nanoscale Res Lett 7:605. 2012
  3. pmc Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique
    Jiang Yong Zhang
    Laboratory of Micro Nano Optoelectronics, Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, Fujian, People s Republic of China
    Nanoscale Res Lett 7:244. 2012

Collaborators

  • Jiang Yong Zhang
  • Xue Qin Lv
  • Shaoqiang Chen
  • Wen Jie Liu
  • Lei Ying Ying
  • Xiao long Hu
  • Jiangyong Zhang
  • Hidefumi Akiyama
  • Wenjie Liu
  • Masahiro Yoshita
  • Akifumi Asahara
  • Takashi Ito
  • Tohru Suemoto
  • Shigeyuki Kuboya
  • Kentaro Onabe
  • Zhi Ren Qiu
  • Ming Chen

Detail Information

Publications3

  1. doi request reprint Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers
    Shaoqiang Chen
    Institute for Solid State Physics, University of Tokyo, 5 1 5 Kashiwanoha, Kashiwa, Chiba 277 8581, Japan
    Sci Rep 4:4325. 2014
    ..The observed universal fast short-wavelength components can be useful in generating even shorter pulses from gain-switched semiconductor lasers. ..
  2. pmc Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells
    Xue Qin Lv
    Department of Physics, Xiamen University, Xiamen, 361005, People s Republic of China
    Nanoscale Res Lett 7:605. 2012
    ..Different from ΓLO, a monotonic increase in Γimp was observed with decreasing LW, which was attributed to the enhanced penetration of the exciton wave function into the barrier layers...
  3. pmc Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique
    Jiang Yong Zhang
    Laboratory of Micro Nano Optoelectronics, Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, Fujian, People s Republic of China
    Nanoscale Res Lett 7:244. 2012
    ..It is believed that the double-transfer technique offers an alternative way to fabricate high performance GaN-based thin-film LEDs...