Affiliation: Shenzhen University
- Design and epitaxy of 1.5 microm InGaAsP-InP MQW material for a transistor laserZigang Duan
Key Laboratory of Optoelectronic Devices and Systems of the Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, P R China
Opt Express 18:1501-9. 2010..With an average doping density of 1 x 10(18) cm(-3) in the base contact layer, the InGaAsP MQWs demonstrated high PL intensity at 1.51 microm and clear satellite diffraction peaks in the XRD spectrum...