Qing Chen

Summary

Affiliation: Peking University
Country: China

Publications

  1. doi The intrinsic origin of hysteresis in MoS2 field effect transistors
    Jiapei Shu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People s Republic of China and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
    Nanoscale 8:3049-56. 2016
  2. doi Negative photoconductivity of InAs nanowires
    Yuxiang Han
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Phys Chem Chem Phys 18:818-26. 2015
  3. pmc Towards on-chip time-resolved thermal mapping with micro-/nanosensor arrays
    Haixiao Liu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, 100871, China
    Nanoscale Res Lett 7:484. 2012
  4. doi Fabrication and electric measurements of nanostructures inside transmission electron microscope
    Qing Chen
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Ultramicroscopy 111:948-54. 2011
  5. doi Room temperature synthesis of K2Mo3O10x3H2O nanowires in minutes
    Weiwei Gong
    Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, People s Republic of China
    Nanotechnology 20:215603. 2009
  6. doi Local Coulomb explosion of boron nitride nanotubes under electron beam irradiation
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    ACS Nano 7:3491-7. 2013
  7. doi Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm
    Tuanwei Shi
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 26:175202. 2015
  8. doi Comparative fracture toughness of multilayer graphenes and boronitrenes
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Nano Lett 15:689-94. 2015
  9. doi The fabrication of nanoelectrodes based on a single carbon nanotube
    Jun Shen
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 20:245307. 2009
  10. doi Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices
    Li Ding
    Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China
    Nano Lett 9:4209-14. 2009

Collaborators

  • Dmitri Golberg
  • Jun Shen
  • Jingyun Wang
  • Yu Zhang
  • Ying Wang
  • Qiang Sun
  • Xianlong Wei
  • Yang Liu
  • Shengyong Xu
  • Wei Wang
  • Zhongfan Liu
  • Yan Li
  • Yao Guo
  • Mengqi Fu
  • Tuanwei Shi
  • Haixiao Liu
  • Jiapei Shu
  • Jianhua Zhao
  • Qingqing Ji
  • Yuxiang Han
  • Dong Pan
  • Xiaoye Huo
  • Weiqiang Sun
  • Chaoying Zhang
  • Jianhui Liao
  • Tingting Xu
  • Weiwei Gong
  • Li Ding
  • Gongtao Wu
  • Bo Liu
  • Min Kan
  • Donglin Ma
  • Xiao Zheng
  • Xing Li
  • Jianping Shi
  • Yiran Liang
  • Xinxing Li
  • Chao Duan
  • Reshef Tenne
  • An Xiang
  • Jinling Sun
  • Lianmao Peng
  • Rita Rosentsveig
  • Ke Ran
  • Rongli Cui
  • Jiongwei Xue
  • Lian Mao Peng
  • Huayong Pan
  • Zhenxing Wang
  • Zhiyong Zhang
  • Qingsheng Zeng
  • Xuelei Liang
  • Leijing Yang
  • Sheng Wang
  • Dapeng Wei
  • Kai Zhang
  • Tian Pei
  • Zhan Wu

Detail Information

Publications17

  1. doi The intrinsic origin of hysteresis in MoS2 field effect transistors
    Jiapei Shu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People s Republic of China and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
    Nanoscale 8:3049-56. 2016
    ..The gate voltage sweep range, sweep direction, sweep time and loading history all affect the hysteresis observed in the transfer curves. ..
  2. doi Negative photoconductivity of InAs nanowires
    Yuxiang Han
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Phys Chem Chem Phys 18:818-26. 2015
    ..The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs. ..
  3. pmc Towards on-chip time-resolved thermal mapping with micro-/nanosensor arrays
    Haixiao Liu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, 100871, China
    Nanoscale Res Lett 7:484. 2012
    ..We show that the TFTC array is a powerful tool for research fields such as chip thermal management, lab-on-a-chip, and other novel electrical, optical, or thermal devices...
  4. doi Fabrication and electric measurements of nanostructures inside transmission electron microscope
    Qing Chen
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Ultramicroscopy 111:948-54. 2011
    ..This review highlights in-situ electric measurements and in-situ fabrication and structure modification using manipulation holder inside TEM...
  5. doi Room temperature synthesis of K2Mo3O10x3H2O nanowires in minutes
    Weiwei Gong
    Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, People s Republic of China
    Nanotechnology 20:215603. 2009
    ....
  6. doi Local Coulomb explosion of boron nitride nanotubes under electron beam irradiation
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    ACS Nano 7:3491-7. 2013
    ..LCE opens up an efficient and versatile way to engineer BNNTs and other dielectric nanostructures with a shorter time and a lower beam density than those required for the knock-on effect-based engineering...
  7. doi Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm
    Tuanwei Shi
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 26:175202. 2015
    ..Based on our results, it is advantageous to use Ni as contact metal for ultrathin NWs. We also observe that the FETs are still working in the diffusive regime even when the channel length is scaled down to 50 nm. ..
  8. doi Comparative fracture toughness of multilayer graphenes and boronitrenes
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Nano Lett 15:689-94. 2015
    ..0 ± 3.9 and 5.5 ± 0.7 MPa√m, respectively, taking into account the notch tip blunting effects. ..
  9. doi The fabrication of nanoelectrodes based on a single carbon nanotube
    Jun Shen
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 20:245307. 2009
    ....
  10. doi Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices
    Li Ding
    Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China
    Nano Lett 9:4209-14. 2009
    ..639 mum have been achieved. Gate length scaling behavior of the Y-contacted CNT FETs is also investigated, revealing a more favorable energy consumption and faster intrinsic speed scaling than that of the Si-based devices...
  11. doi Patterned close-packed nanoparticle arrays with controllable dimensions and precise locations
    Jianhui Liao
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871, PR China
    Small 8:991-6. 2012
    ..The morphology and position of the nanoparticle arrays are determined by the relief structures, while the internal order of the arrays is achieved through the self-assembly process and is maintained during the transfer...
  12. pmc Breakdown of Richardson's law in electron emission from individual self-Joule-heated carbon nanotubes
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P R China
    Sci Rep 4:5102. 2014
    ....
  13. ncbi Controlling electron-beam-induced carbon deposition on carbon nanotubes by Joule heating
    Xian Long Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People s Republic of China
    Nanotechnology 19:355304. 2008
    ..The method can be used to control the deposition rate of EBID in nanowelding and nanofabrication and to eliminate amorphous carbon contamination in in situ study of nanostructures...
  14. doi Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire
    Qingqing Ji
    Center for Nanochemistry CNC, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, College of Engineering, Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, and Center for Applied Physics and Technology, Peking University, Beijing 100871, People s Republic of China
    Nano Lett 15:198-205. 2015
    ..These findings are expected to shed light on the controlled MoS2 growth toward predefined domain orientation and large domain size, thus enabling its versatile applications in next-generation nanoelectronics and optoelectronics. ..
  15. doi A nano-stripe based sensor for temperature measurement at the submicrometer and nano scales
    Xiaoye Huo
    Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871, China
    Small 10:3869-75. 2014
    ..The results confirm the size effect in Seebeck coefficient previously observed in microstripe sensors of the same device configuration. ..
  16. doi Phonon-assisted electron emission from individual carbon nanotubes
    Xianlong Wei
    Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, People s Republic of China
    Nano Lett 11:734-9. 2011
    ..A low working voltage, high emission density, and side emission character make phonon-assisted electron emission primarily promising in electron source applications...
  17. doi Self-healing of bended WS2 nanotubes and its effect on the nanotube's properties
    Tingting Xu
    Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, PR China
    Nanoscale 4:7825-31. 2012
    ..More importantly, the strength and electrical conductivity of the NTs were also restored to their original level when the structure recovered...