Zhipeng Huang

Summary

Affiliation: Jiangsu University
Country: China

Publications

  1. ncbi request reprint Metal-assisted electrochemical etching of silicon
    Z P Huang
    Functional Molecular Materials Center, Scientific Research Academy, Jiangsu University, Zhenjiang, People s Republic of China
    Nanotechnology 21:465301. 2010
  2. doi request reprint Silicon nanowires/reduced graphene oxide composites for enhanced photoelectrochemical properties
    Zhipeng Huang
    Functional Molecular Materials Research Centre, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, PR China
    ACS Appl Mater Interfaces 5:1961-6. 2013
  3. doi request reprint Facile low-temperature synthesis of ultralong monodisperse ZnSe quantum wires with the assistance of Ag2S
    Zhipeng Huang
    Scientific Research Academy, Jiangsu University, Zhenjiang, Jiangsu, 212013, PR China
    Chemistry 19:1732-9. 2013
  4. ncbi request reprint Low-cost, large-scale, and facile production of Si nanowires exhibiting enhanced third-order optical nonlinearity
    Zhipeng Huang
    Functional Molecular Materials Research Centre, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, PR China
    ACS Appl Mater Interfaces 4:1553-9. 2012
  5. doi request reprint Metal-assisted chemical etching of silicon: a review
    Zhipeng Huang
    Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle, Germany
    Adv Mater 23:285-308. 2011
  6. pmc Quasi-radial growth of metal tube on si nanowires template
    Zhipeng Huang
    Functional Molecular Materials Centre, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, P, R, China
    Nanoscale Res Lett 6:165. 2011
  7. doi request reprint Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching
    Nadine Geyer
    Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle, Germany
    Nano Lett 9:3106-10. 2009
  8. doi request reprint Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions
    Zhipeng Huang
    Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle, Germany
    Nano Lett 9:2519-25. 2009
  9. ncbi request reprint A facile one-step approach to obtaining uniform matchstick-like Ag2S-CdS nanoheterostructures
    Zhipeng Huang
    Functional Molecular Materials Research Center, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, People s Republic of China
    Nanotechnology 23:335604. 2012
  10. ncbi request reprint The fabrication of nanoporous Pt-based multimetallic alloy nanowires and their improved electrochemical durability
    Lifeng Liu
    Max Planck Institute of Microstructure Physics, D 06120 Halle, Germany
    Nanotechnology 22:105604. 2011

Collaborators

Detail Information

Publications10

  1. ncbi request reprint Metal-assisted electrochemical etching of silicon
    Z P Huang
    Functional Molecular Materials Center, Scientific Research Academy, Jiangsu University, Zhenjiang, People s Republic of China
    Nanotechnology 21:465301. 2010
    ..Meanwhile, the metal-assisted electrochemical etching method enables convenient control over the etching direction of non-(100) substrates, and facilitates the fabrication of orientation-modulated silicon nanostructures...
  2. doi request reprint Silicon nanowires/reduced graphene oxide composites for enhanced photoelectrochemical properties
    Zhipeng Huang
    Functional Molecular Materials Research Centre, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, PR China
    ACS Appl Mater Interfaces 5:1961-6. 2013
    ..The method and results shown here indicate a convenient and applicable approach to further exploitation of high activity materials for photoelectrochemical applications...
  3. doi request reprint Facile low-temperature synthesis of ultralong monodisperse ZnSe quantum wires with the assistance of Ag2S
    Zhipeng Huang
    Scientific Research Academy, Jiangsu University, Zhenjiang, Jiangsu, 212013, PR China
    Chemistry 19:1732-9. 2013
    ..This method is convenient for the controllable fabrication of metal selenides and is of importance for exploring fundamental nanoscale semiconductor physics, as well as for affording technological devices with optimized characteristics...
  4. ncbi request reprint Low-cost, large-scale, and facile production of Si nanowires exhibiting enhanced third-order optical nonlinearity
    Zhipeng Huang
    Functional Molecular Materials Research Centre, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, PR China
    ACS Appl Mater Interfaces 4:1553-9. 2012
    ..The silicon nanowires show excellent third-order nonlinear optical properties, with a third-order susceptibility much larger than that of bulk silicon, porous silicon, and silicon nanocrystals embedded in SiO(2)...
  5. doi request reprint Metal-assisted chemical etching of silicon: a review
    Zhipeng Huang
    Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle, Germany
    Adv Mater 23:285-308. 2011
    ..Finally, some open questions in the understanding of metal-assisted chemical etching are compiled...
  6. pmc Quasi-radial growth of metal tube on si nanowires template
    Zhipeng Huang
    Functional Molecular Materials Centre, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, P, R, China
    Nanoscale Res Lett 6:165. 2011
    ..Inner-diameter-defined metal tube is achieved by choosing Si nanowires with desired diameter as a template. Metal tubes with inner diameters ranging from 1 μm to sub-50 nm are fabricated...
  7. doi request reprint Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching
    Nadine Geyer
    Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle, Germany
    Nano Lett 9:3106-10. 2009
    ..This technique allows the fabrication of nanowires with a high area density of 10(10) wires/cm(2), including the control of their diameter and length...
  8. doi request reprint Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions
    Zhipeng Huang
    Max Planck Institute of Microstructure Physics, Weinberg 2, D 06120 Halle, Germany
    Nano Lett 9:2519-25. 2009
    ..The diameter of Si nanowires can be easily controlled by a combination of the pore diameter of the porous alumina film and varying the thickness of the deposited metal film...
  9. ncbi request reprint A facile one-step approach to obtaining uniform matchstick-like Ag2S-CdS nanoheterostructures
    Zhipeng Huang
    Functional Molecular Materials Research Center, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, People s Republic of China
    Nanotechnology 23:335604. 2012
    ....
  10. ncbi request reprint The fabrication of nanoporous Pt-based multimetallic alloy nanowires and their improved electrochemical durability
    Lifeng Liu
    Max Planck Institute of Microstructure Physics, D 06120 Halle, Germany
    Nanotechnology 22:105604. 2011
    ....