Wang Lu

Summary

Affiliation: Institute of Physics
Country: China

Publications

  1. pmc Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
    He Hui Sun
    Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin, 150001, China
    Nanoscale Res Lett 7:649. 2012
  2. pmc The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate
    Zhang Shuhui
    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
    Nanoscale Res Lett 7:87. 2012

Collaborators

  • He Hui Sun
  • Zhang Shuhui
  • Chen Hong
  • Dong Bo Wang
  • Gao Huaiju
  • Feng Yun Guo
  • Lu Wang
  • Jia Haiqiang
  • Wang Wenxin
  • Cui Yanxiang
  • Tian Haitao
  • Deng Yue Li
  • Shi Zhenwu
  • Zhao Liancheng
  • Lian cheng ZHAO

Detail Information

Publications2

  1. pmc Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
    He Hui Sun
    Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin, 150001, China
    Nanoscale Res Lett 7:649. 2012
    ..It is believed that the high dislocation density and weaker polarization that resulted from the rough interface are determinant factors of vanished ISB absorption for MQW films with the GaN/AlN SL interlayer...
  2. pmc The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate
    Zhang Shuhui
    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
    Nanoscale Res Lett 7:87. 2012
    ..This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor...