Qing Qing Sun

Summary

Affiliation: Fudan University
Country: China

Publications

  1. pmc Atomic scale investigation of a graphene nano-ribbon based high efficiency spin valve
    Qing Qing Sun
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
    Sci Rep 3:2921. 2013
  2. pmc High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition
    Run Chen Fang
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, China
    Nanoscale Res Lett 8:92. 2013
  3. pmc Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer
    Shan Zheng
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China
    Nanoscale Res Lett 8:116. 2013
  4. pmc Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition
    Zhi Yuan Ye
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China
    Nanoscale Res Lett 8:108. 2013
  5. pmc Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications
    Shi Jin Ding
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
    Nanoscale Res Lett 8:80. 2013
  6. pmc Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
    Peng Zhou
    ASIC and System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
    Nanoscale Res Lett 8:91. 2013
  7. pmc Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition
    Yu Zhu Gu
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
    Nanoscale Res Lett 8:107. 2013
  8. doi request reprint A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation
    Peng Fei Wang
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
    Science 341:640-3. 2013
  9. pmc Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage
    Lian Jie Li
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People s Republic of China
    Nanoscale Res Lett 7:544. 2012

Collaborators

  • David Wei Zhang
  • Peng Zhou
  • Shi Jin Ding
  • Hong Liang Lu
  • Peng Fei Wang
  • Yu Zhu Gu
  • Zhi Yuan Ye
  • Yuan Zhang
  • Run Chen Fang
  • Wen Yang
  • Yang Geng
  • Shan Zheng
  • Lian Jie Li
  • Sun Chen
  • Xi Lin
  • An Quan Jiang
  • Yi Gong
  • Zhang Yi Xie
  • Hong Bing Chen
  • Xing Mei Cui
  • Lei Liu
  • Xiao Yong Liu
  • Chen Shen
  • Li Ye
  • Wei Liu
  • Chunxiang Zhu
  • Anquan Jiang
  • Bao Zhu

Detail Information

Publications9

  1. pmc Atomic scale investigation of a graphene nano-ribbon based high efficiency spin valve
    Qing Qing Sun
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
    Sci Rep 3:2921. 2013
    ..The spin dependent electron transmission spectrum and space-resolve density of states are employed to investigate the physical origin of the spin-polarized current and magneto resistance. ..
  2. pmc High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition
    Run Chen Fang
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, China
    Nanoscale Res Lett 8:92. 2013
    ..Considering the excellent performance of the device fabricated by low-temperature atomic layer deposition, the process may promote the potential applications of oxide-based resistive random access memory in flexible integrated circuits...
  3. pmc Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer
    Shan Zheng
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China
    Nanoscale Res Lett 8:116. 2013
    ..We can clearly demonstrate that the insertion of Al2O3 interfacial layer can modulate the current density effectively and realize the transfer between the Schottky contact and ohmic contact...
  4. pmc Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition
    Zhi Yuan Ye
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China
    Nanoscale Res Lett 8:108. 2013
    ..874 × 10-4 Ω cm. In addition, carrier concentration of the prepared films underwent an evident increase and then decreased with the increase of Ti doping concentration...
  5. pmc Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications
    Shi Jin Ding
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
    Nanoscale Res Lett 8:80. 2013
    ....
  6. pmc Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
    Peng Zhou
    ASIC and System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
    Nanoscale Res Lett 8:91. 2013
    ..Meanwhile, the energy consumption also decreases exponentially. This phenomenon indicates the temperature-related charge trap/detrapping process which contributes to the RESET besides direct Joule heat...
  7. pmc Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition
    Yu Zhu Gu
    State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
    Nanoscale Res Lett 8:107. 2013
    ..High-resolution transmission electron microscopy images show clear lattice spacing of ZnO in nanolaminates, indicating that ZnO layers are polycrystalline with preferred (002) orientation while TiO2 layers are amorphous...
  8. doi request reprint A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation
    Peng Fei Wang
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
    Science 341:640-3. 2013
    ..A linear dependence of drain current on light intensity was observed when the transistor was exposed to light, so possible applications include image sensing with high density and performance. ..
  9. pmc Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage
    Lian Jie Li
    State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People s Republic of China
    Nanoscale Res Lett 7:544. 2012
    ..This reflects good power characteristics of the electrostatic capacitor...