Chunqing Gao

Summary

Affiliation: Beijing Institute of Technology
Country: China

Publications

  1. doi request reprint 6.1 W single frequency laser output at 1645 nm from a resonantly pumped Er:YAG nonplanar ring oscillator
    Chunqing Gao
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Opt Lett 37:1859-61. 2012
  2. ncbi request reprint Resonantly pumped 1.645 μm high repetition rate Er:YAG laser Q-switched by a graphene as a saturable absorber
    Chunqing Gao
    School of Opto Electronics, Beijing Institute of Technology, Beijing, China
    Opt Lett 37:632-4. 2012
  3. doi request reprint Superposition of helical beams by using a Michelson interferometer
    Chunqing Gao
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Opt Express 18:72-8. 2010
  4. doi request reprint Frequency stabilization of a single-frequency Q-switched Tm:YAG laser by using injection seeding technique
    Yunshan Zhang
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Appl Opt 50:4232-6. 2011
  5. ncbi request reprint Graphene on SiC as a Q-switcher for a 2 μm laser
    Qing Wang
    Opt Lett 37:395-7. 2012
  6. ncbi request reprint Resonantly pumped 1.645 μm single longitudinal mode Er:YAG laser with intracavity etalons
    Lingni Zhu
    School of Opto Electronics, Beijing Institute of Technology, Beijing, China
    Appl Opt 51:1616-8. 2012
  7. doi request reprint Tunable continuous-wave laser at quasi-three-level with a disordered Nd:LGS crystal
    Qing Wang
    Laboratory of Optical Physics, Institute of Physics, Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing, 100190, China
    Opt Lett 36:1770-2. 2011
  8. doi request reprint Single frequency 1645 nm Er:YAG nonplanar ring oscillator resonantly pumped by a 1470 nm laser diode
    Yan Zheng
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Opt Lett 38:784-6. 2013
  9. doi request reprint Single-frequency operation of diode-pumped 2 microm Q-switched Tm:YAG laser injection seeded by monolithic nonplanar ring laser
    Chunqing Gao
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Appl Opt 49:2841-4. 2010
  10. doi request reprint Single frequency operation of a tunable injection-seeded Nd:GSAG Q-switched laser around 942nm
    Zhifeng Lin
    School of Opto Electronics, Beijing Institute of Technology, China
    Opt Express 18:6131-6. 2010

Collaborators

  • Lei Wang
  • Yan Li
  • Huaijin Zhang
  • Xin Wang
  • Yan Zheng
  • Ran Wang
  • Mingwei Gao
  • Qing Wang
  • Lingni Zhu
  • Zhiyi Wei
  • Zhiguo Zhang
  • Yunshan Zhang
  • Zhifeng Lin
  • Qing Ye
  • Zhengyong Wang
  • Dehua Li
  • Jingjing Lin
  • Liwei Guo
  • Yuwan Zou
  • Hao Teng
  • Haohai Yu
  • Zhenlin Wang
  • Jiyang Wang
  • Yongdong Zhang
  • Frank Kallmeyer
  • Hans Joachim Eichler

Detail Information

Publications12

  1. doi request reprint 6.1 W single frequency laser output at 1645 nm from a resonantly pumped Er:YAG nonplanar ring oscillator
    Chunqing Gao
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Opt Lett 37:1859-61. 2012
    ..5% doped Er:YAG nonplanar crystal was used. An up to 6.1 W single frequency laser output at 1645 nm was obtained, with a slope efficiency of 55.2% and an optical efficiency of 48.0%. The linewidth of the Er:YAG NPRO was 14.4 kHz...
  2. ncbi request reprint Resonantly pumped 1.645 μm high repetition rate Er:YAG laser Q-switched by a graphene as a saturable absorber
    Chunqing Gao
    School of Opto Electronics, Beijing Institute of Technology, Beijing, China
    Opt Lett 37:632-4. 2012
    ..Graphene on a silicon carbide was used as the saturable absorber for the Q-switching. The pulse energy of the 1.645 μm Q-switched Er:YAG laser was 7.05 μJ, with a pulse repetition rate of 35.6 kHz and an average output power of 251 mW...
  3. doi request reprint Superposition of helical beams by using a Michelson interferometer
    Chunqing Gao
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Opt Express 18:72-8. 2010
    ..The experimental results of the collinear superposition of helical beams and their OAM eigen-states detection are presented...
  4. doi request reprint Frequency stabilization of a single-frequency Q-switched Tm:YAG laser by using injection seeding technique
    Yunshan Zhang
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Appl Opt 50:4232-6. 2011
    ..A method used to restrict the frequency jitter of the laser was discussed. The fluctuation of the laser frequency was reduced from 2.36 MHz (rms) to 1.07 MHz (rms) in 1 h by optimizing the voltage of the piezoelectric translator...
  5. ncbi request reprint Graphene on SiC as a Q-switcher for a 2 μm laser
    Qing Wang
    Opt Lett 37:395-7. 2012
    ..The maximum average output power, pulse repetition rate, and single pulse energy were 38 mW, 27.9 kHz, and 1.74 μJ, respectively. Our results illustrate that graphene can be used as a saturable absorber at the 2 μm region...
  6. ncbi request reprint Resonantly pumped 1.645 μm single longitudinal mode Er:YAG laser with intracavity etalons
    Lingni Zhu
    School of Opto Electronics, Beijing Institute of Technology, Beijing, China
    Appl Opt 51:1616-8. 2012
    ..749 W single longitudinal mode output power at 1.645 μm from an Er:YAG laser with two intracavity etalons. The M<sup>2</sup>-factors of the Er:YAG laser were 1.041 and 1.068 in the x and y directions, respectively...
  7. doi request reprint Tunable continuous-wave laser at quasi-three-level with a disordered Nd:LGS crystal
    Qing Wang
    Laboratory of Optical Physics, Institute of Physics, Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing, 100190, China
    Opt Lett 36:1770-2. 2011
    ..8 to 906.6 nm with an etalon inserted into the V-type cavity. To the best of our knowledge, it is the first time to obtain a tunable laser based on the (4)F(3/2)-(4)I(9/2) transition of Nd(3+)-doped crystals...
  8. doi request reprint Single frequency 1645 nm Er:YAG nonplanar ring oscillator resonantly pumped by a 1470 nm laser diode
    Yan Zheng
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Opt Lett 38:784-6. 2013
    ..By using a 0.5%-doped Er:YAG nonplanar ring resonator, a 0.284 W single-frequency laser output at 1645 nm was obtained with a slope efficiency of 42.1%. The beam quality in x and y directions were 1.064 and 1.039, respectively...
  9. doi request reprint Single-frequency operation of diode-pumped 2 microm Q-switched Tm:YAG laser injection seeded by monolithic nonplanar ring laser
    Chunqing Gao
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Appl Opt 49:2841-4. 2010
    ..From the heterodyne beating measurement, the frequency difference between the seed laser and the Q-switched laser is determined to be 37.66MHz, with a half-width of the symmetric spectrum of about 2 MHz...
  10. doi request reprint Single frequency operation of a tunable injection-seeded Nd:GSAG Q-switched laser around 942nm
    Zhifeng Lin
    School of Opto Electronics, Beijing Institute of Technology, China
    Opt Express 18:6131-6. 2010
    ..2mJ was obtained at a repetition rate of 10Hz. The linewidth of the single frequency laser was less than 100MHz. The wavelength of the single frequency Nd:GSAG laser can be tuned from 942.38nm to 943.10nm...
  11. doi request reprint Resonantly pumped monolithic nonplanar Ho:YAG ring laser with high-power single-frequency laser output at 2122 nm
    Lei Wang
    School of Opto Electronics, Beijing Institute of Technology, Beijing 100081, China
    Opt Express 21:9541-6. 2013
    ..4% and an optical-optical efficiency of 50.0%. The power stability of the Ho:YAG NPRO laser was 0.29% at maximum single frequency output power. The beam quality M(2) factors were measured to be less than 1.1 in x- and y- directions...
  12. doi request reprint Diode-pumped 2 μm tunable single-frequency Tm:LuAG laser with intracavity etalons
    Lei Wang
    School of Opto Electronics, Beijing Institute of Technology, Beijing, China
    Appl Opt 52:1272-5. 2013
    ..61%. The wavelength tuning range of the single-frequency Tm:LuAG laser was 11 nm from 2018.714 to 2029.876 nm. The M(2) factors were measured to be 1.38 and 1.36 in the x and y directions, respectively...