Yonghai Chen

Summary

Publications

  1. pmc Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface
    Caihong Jia
    Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P, O, Box 912, Beijing, 100083, People s Republic of China
    Nanoscale Res Lett 8:23. 2013
  2. pmc Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
    Caihong Jia
    Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P, O, Box 912, Beijing 100083, PR China
    Nanoscale Res Lett 6:316. 2011
  3. doi request reprint Photorefractive effects in ZnO nanorod doped liquid crystal cell
    Yubing Guo
    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Appl Opt 50:1101-4. 2011
  4. ncbi request reprint Spin splitting modulated by uniaxial stress in InAs nanowires
    Genhua Liu
    Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, People s Republic of China Central South University of Forestry and Technology, People s Republic of China
    J Phys Condens Matter 23:015801. 2011
  5. pmc Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
    Hongyi Zhang
    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, People s Republic of China
    Nanoscale Res Lett 7:600. 2012
  6. pmc Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
    Tianfeng Li
    Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, People s Republic of China
    Nanoscale Res Lett 6:463. 2011

Collaborators

  • Zhanguo Wang
  • Caihong Jia
  • Hongyi Zhang
  • Shaoyan Yang
  • Xianglin Liu
  • Weifeng Zhang
  • Genhua Liu
  • Yubing Guo
  • Tianfeng Li
  • Guanyu Zhou
  • Chenguang Tang
  • Xiaolong Zhou
  • Shuai Luo
  • Yan Guo
  • Guo Dong Hao
  • Wen Lei
  • Lijun Wang
  • Tao Yang
  • Shengchun Qu
  • Yongzheng Hu
  • Ying Xiang

Detail Information

Publications6

  1. pmc Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface
    Caihong Jia
    Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P, O, Box 912, Beijing, 100083, People s Republic of China
    Nanoscale Res Lett 8:23. 2013
    ..These results show that polar, nonpolar, and semipolar ZnO films for different applications can be grown epitaxially on STO substrates by MOCVD...
  2. pmc Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
    Caihong Jia
    Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P, O, Box 912, Beijing 100083, PR China
    Nanoscale Res Lett 6:316. 2011
    ..The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices...
  3. doi request reprint Photorefractive effects in ZnO nanorod doped liquid crystal cell
    Yubing Guo
    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Appl Opt 50:1101-4. 2011
    ..Experiment results show that photo-introduced charge density is nearly in proportion to the intensity of writing beams...
  4. ncbi request reprint Spin splitting modulated by uniaxial stress in InAs nanowires
    Genhua Liu
    Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, People s Republic of China Central South University of Forestry and Technology, People s Republic of China
    J Phys Condens Matter 23:015801. 2011
    ....
  5. pmc Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
    Hongyi Zhang
    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, People s Republic of China
    Nanoscale Res Lett 7:600. 2012
    ..A brief discussion on the indium desorption was given. Those results gave hints of the kinetic aspects of QD self-assembly...
  6. pmc Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
    Tianfeng Li
    Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, People s Republic of China
    Nanoscale Res Lett 6:463. 2011
    ..The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed.PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km...