W Bergbauer

Summary

Publications

  1. ncbi Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
    W Bergbauer
    Osram Opto Semiconductors GmbH, Regensburg, Germany
    Nanotechnology 21:305201. 2010

Detail Information

Publications1

  1. ncbi Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
    W Bergbauer
    Osram Opto Semiconductors GmbH, Regensburg, Germany
    Nanotechnology 21:305201. 2010
    ..Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements...