John P George
Affiliation: Ghent University
- Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layersJohn P George
Department of Electronics and Information Systems, Ghent University, Sint Pietersnieuwstraat 41, Gent, 9000, Belgium
Nanoscale Res Lett 8:62. 2013..A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm...