John P George

Summary

Affiliation: Ghent University
Country: Belgium

Publications

  1. pmc Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers
    John P George
    Department of Electronics and Information Systems, Ghent University, Sint Pietersnieuwstraat 41, Gent, 9000, Belgium
    Nanoscale Res Lett 8:62. 2013

Detail Information

Publications1

  1. pmc Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers
    John P George
    Department of Electronics and Information Systems, Ghent University, Sint Pietersnieuwstraat 41, Gent, 9000, Belgium
    Nanoscale Res Lett 8:62. 2013
    ..A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm...